NPN Silicon Phototransistor
OP550, OP552, OP555, OP560, OP565,
OP750, OP755 Series
Features:
•
•
•
•
•
•
Wide receiving angle
Four sensi vity ranges
Side-looking package
Ideal for space-limited applica ons
Ideal for PCBoard moun ng
Choice of clear, opaque or blue- nted package
OP550
OP560
OP750
OP770
OP552
OP555
OP565
OP755
OP775
Description:
OP550, OP552, OP555, OP750, OP755, OP770
and
OP775
series consists of a NPN silicon phototransistor molded in an
epoxy package with a wide receiving angle that provides rela vely even recep on over a large area. The
OP750, OP755,
OP770
and
OP775
have addi onal circuitry to enhance the opera on of the device for stray light levels.
OP560
and
OP565
series consists of a NPN silicon photodarlington transistor molded in an epoxy package with a wide
receiving angle that provides rela vely even recep on over a large area.
The side-looking package design allows easy PCBoard moun ng of slo ed op cal switches or op cal interrupt detectors.
The
OP550, OP560, OP750
and
OP770
devices have an external lens in a clear epoxy package.
The
OP552
device has an integral lens in an opaque plas c package that is op cally transparent to infrared light but opaque
to visible wavelengths. This feature allows the device to be used under high ambient light condi ons – or anywhere
external light sources could interfere with the intended sensing applica on (visible light immunity).
The
OP555, OP565, OP755
and
OP775
devices have an internal lens in a blue- nted package. The lensing e ect of this
package allows an acceptance half-angle of 28° when measured from the op cal axis to the half-power point.
These devices are 100% produc on tested using infrared light for close correla on with OPTEK’s GaAs and GaAIAs emi ers.
All of these sensors are mechanically and spectrally matched to the
OP140, OP142, OP145, OP240
and
OP245
series of
infrared emi ng diodes.
Please refer to Applica on Bulle ns 208 and 210 for addi onal design informa on and reliability (degrada on) data.
For custom versions please contact your OPTEK representa ve.
Applications:
•
Applica ons requiring
•
•
•
•
•
•
•
wide receiving angle
Applica ons requiring
PCBoard moun ng
Space-limited applica ons
Op cal switches
Op cal interrupt detectors
Op cal encoders
Non-contact posi on
sensing
Machine automa on
OP550A
OP550B
OP550C
OP550D
OP __ __ __ __
55
= Phototransistor
56
= Photodarlington
75
= Phototransistor with R
BE
77
= Phototransistor with C
CE
A
= Highest sensitivity level
B
= Sensitivity Level with Min. Max.
C
= Middle Sensitivity Level
D
= Lowest Sensitivity Level
0
= Extended Lens - Clear Package
2
= Extended Lens - Blue Tinted Package
5
= Integral Lens - Blue Tinted Package
Available Part Numbers
OP560A OP565A OP750A
OP560B OP565B OP750B
OP560C OP565C OP750C
OP750D
RoHS
OP552A
OP552B
OP552C
OP552D
OP555A
OP555B
OP555C
OP555D
OP755A
OP755B
OP755C
OP755D
OP770A
OP770B
OP770C
OP770D
OP775A
OP775B
OP775C
OP775D
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue A
08/2016
Page 1
NPN Silicon Phototransistor
OP550, OP552, OP555, OP560, OP565,
OP750, OP755 Series
OP550, OP552, OP560, OP750, OP770 (A, B, C, D)
DIMENSIONS ARE IN:
[MILLIMETERS]
INCHES
OP555, OP565, OP755 , OP775 (A, B, C, D)
DIMENSIONS ARE IN:
[MILLIMETERS]
INCHES
2
Pin #
1
2
1
Sensor
Emitter
Collector
OP555 - CONTAINS POLYSULFONE
To avoid stress cracking, we suggest using
ND Industries’
Vibra-Tite
for thread-locking.
Vibra-Tite
evaporates fast without causing structural failure in
OPTEK'S molded plastics.
Notes:
1. RMA ux is recommended. Dura on can be extended to 10 seconds maximum when ow soldering. A maximum 20 grams force may be applied
to the leads when soldering.
2. For OP550, OP560, OP555 and OP565, derate linearly 1.33 mW/° C above 25° C. For OP552, derate linearly 1.25 mW/° C above 25° C.
3. For all phototransistors in this series, the light source is an un ltered GaAs LED with a peak emission wavelength of 935 nm. For OP550 and
OP555 only, a radiometric intensity level that varies less than 10% over the en re lens surface of the phototransistor being tested applies.
4. To calculate typical collector dark current in
μA,
use the formula I
CEO
=10
(0.040 TA - 3.4)
, where T
A
is ambient temperature in °C.
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue A
08/2016
Page 2
NPN Silicon Phototransistor
OP550, OP552, OP555, OP560, OP565,
OP750, OP755 Series
Electrical Specifications
Absolute Maximum Ratings
(T
A
= 25° C unless otherwise noted)
Storage Temperature Range
Opera ng Temperature Range
OP550, OP555, OP560, OP565, OP750, OP755
OP552
Collector-Emi er Voltage
OP550, OP552, OP555, OP560, OP750, OP755
OP565
Emi er-Collector Voltage
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
Power Dissipa on
OP550, OP552, OP555, OP560, OP565, OP755
OP750
100 mW
(2)
200 mW
(2)
30 V
15 V
5V
260° C
(1)
-40
o
C to +100
o
C
-40
o
C to +85
o
C
-40
o
C to +100
o
C
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue A
08/2016
Page 3
NPN Silicon Phototransistor
OP550, OP552, OP555, OP560, OP565,
OP750, OP755 Series
Electrical Specifications
Electrical Characteristics
(T
A
= 25° C unless otherwise noted)
SYMBOL
PARAMETER
On-State Collector Current
OP550A, OP552A, OP555A
OP550B, OP552B, OP555B
OP550C, OP552C, OP555C
OP550D, OP552D, OP555D
OP560A, OP565A
OP560B, OP565B
OP560C, OP565C
OP750A
OP750B
OP750C
OP750D
OP755A
OP755B
OP755C
OP755D
OP770A
OP770B
OP770C
OP770D
OP775A
OP775B
OP775C
OP775D
I
C
/ T
I
CEO
Rela ve I
C
Charge with Temperature
Collector-Dark Current
Collector-Emi er Breakdown Voltage
OP550, OP552, OP555, OP750, OP755,
OP770, OP775
OP560, OP565
Emi er-Collector Breakdown Voltage
Collector-Emi er Satura on Voltage
OP550, OP552, OP555, OP750, OP755,
OP770, OP775
OP560, OP565
MIN
2.55
1.30
0.25
0.25
6.6
3.3
1.1
2.25
1.50
0.85
0.85
1.80
1.20
0.70
0.70
2.25
1.50
0.85
0.85
1.80
1.20
0.70
0.70
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.00
-
MAX
-
4.70
2.40
-
-
9.8
-
7.00
4.20
2.80
7.00
5.50
3.40
2.25
5.50
7.00
4.20
2.80
7.00
5.50
3.40
2.25
5.50
-
100
%/°C
nA
V
CE
= 5.0 V, E
E
= 1.0 mW/cm
2,
= 935 nm
V
CE
= 10.0 V, E
E
= 0
(4)
UNITS
TEST CONDITIONS
V
CE
= 5.0 V, E
E
= 1.0 mW/cm
2(3)
V
CE
= 2.0 V, E
E
= 0.1 mW/cm
2(3)
I
C(ON)
mA
V
CE
= 5.0 V, E
E
= 1.0 mW/cm
2(3)
V
(BR)CEO
30
15
5.0
-
-
-
-
V
-
-
V
I
C
= 100
μA,
E
E
= 0
(4)
I
C
= 1 mA, E
E
= 0
(4)
I
E
= 100
μA
I
C
= 100
μA,
E
E
= 1.0 mW/cm
2(3)
V
I
C
= 0.4 mA, E
E
= 0.1 mW/cm
2(3)
V
(BR)ECO
V
CE(SAT)
-
-
-
-
0.40
1.10
See page 2 for Notes
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue A
08/2016
Page 4
NPN Silicon Phototransistor
OP550, OP552, OP555, OP560, OP565,
OP750, OP755 Series
Performance
Switching Test Circuit
I
F
V
CC
= 5 V
100
V
RL
R
L
Adjust I
F
to obtain
OP552 - Angular Response
100
12
OP552 - On-State Collector Current
vs Irradiance
80
On-State Collector Current (I
C(ON)
) (mA)
10
= 935 nm
8
Relative Collector Current (%)
60
6
40
4
= 880 nm
20
2
-45
-30
-15
0
15
30
45
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Angular Displacement (Degrees)
Irradiance (E
E
) (mW/cm
2
)
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue A
08/2016
Page 5
Microcontroller MCU
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