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FDR8308P

Description
MOSFET 2P-CH 20V 3.2A SSOT-8
Categorysemiconductor    Discrete semiconductor   
File Size106KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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MOSFET 2P-CH 20V 3.2A SSOT-8

FDR8308P Parametric

Parameter NameAttribute value
FET type2 P-channels (dual)
FET functionlogic level gate
Drain-source voltage (Vdss)20V
Current - Continuous Drain (Id) at 25°C3.2A
Rds On (maximum value) when different Id, Vgs50 milliohms @ 3.2A, 4.5V
Vgs (th) (maximum value) when different Id1.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)19nC @ 4.5V
Input capacitance (Ciss) at different Vds (maximum value)1240pF @ 10V
Power - Max800mW
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Package/casing8-SMD, gull wing
Supplier device packagingSuperSOT™-8

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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