MOSFET 2P-CH 20V 3.2A SSOT-8
Parameter Name | Attribute value |
FET type | 2 P-channels (dual) |
FET function | logic level gate |
Drain-source voltage (Vdss) | 20V |
Current - Continuous Drain (Id) at 25°C | 3.2A |
Rds On (maximum value) when different Id, Vgs | 50 milliohms @ 3.2A, 4.5V |
Vgs (th) (maximum value) when different Id | 1.5V @ 250µA |
Gate charge (Qg) at different Vgs (maximum value) | 19nC @ 4.5V |
Input capacitance (Ciss) at different Vds (maximum value) | 1240pF @ 10V |
Power - Max | 800mW |
Operating temperature | -55°C ~ 150°C(TJ) |
Installation type | surface mount |
Package/casing | 8-SMD, gull wing |
Supplier device packaging | SuperSOT™-8 |