EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

S1ML RVG

Description
DIODE GEN PURP 1000V 1A SUB SMA
Categorysemiconductor    Discrete semiconductor   
File Size176KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

S1ML RVG Overview

DIODE GEN PURP 1000V 1A SUB SMA

S1ML RVG Parametric

Parameter NameAttribute value
Diode typestandard
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf1.1V @ 1A
speedStandard recovery >500ns, >200mA (Io)
Reverse recovery time (trr)1.8µs
Current at different Vr - Reverse leakage current5µA @ 1000V
Capacitance at different Vr, F9pF @ 4V,1MHz
Installation typesurface mount
Package/casingDO-219AB
Supplier device packagingSub SMA
Operating Temperature - Junction-55°C ~ 175°C

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号