DIODE GEN PURP 1000V 1A SUB SMA
Parameter Name | Attribute value |
Diode type | standard |
Current - average rectification (Io) | 1A |
Voltage at different If - Forward (Vf | 1.1V @ 1A |
speed | Standard recovery >500ns, >200mA (Io) |
Reverse recovery time (trr) | 1.8µs |
Current at different Vr - Reverse leakage current | 5µA @ 1000V |
Capacitance at different Vr, F | 9pF @ 4V,1MHz |
Installation type | surface mount |
Package/casing | DO-219AB |
Supplier device packaging | Sub SMA |
Operating Temperature - Junction | -55°C ~ 175°C |