Philips Semiconductors
Product Specification
PowerMOS transistor
TOPFET high side switch
DESCRIPTION
Monolithic single channel high side
protected power switch in
TOPFET2
technology assembled in
a 5 pin plastic package.
PIP3208-A
QUICK REFERENCE DATA
SYMBOL
I
L
SYMBOL
V
BG
I
L
T
j
R
ON
PARAMETER
Nominal load current (ISO)
PARAMETER
Continuous off-state supply voltage
Continuous load current
Continuous junction temperature
On-state resistance
T
j
= 25˚C
MIN.
2
MAX.
50
6
150
180
UNIT
A
UNIT
V
A
˚C
mΩ
APPLICATIONS
General controller for driving
lamps, motors, solenoids, heaters.
FEATURES
Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Overtemperature protection
Load current limiting
Latched overload and
short circuit protection
Overvoltage and undervoltage
shutdown with hysteresis
On-state open circuit load
detection
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection
FUNCTIONAL BLOCK DIAGRAM
BATT
STATUS
POWER
MOSFET
CONTROL &
PROTECTION
CIRCUITS
LOAD
GROUND
RG
INPUT
Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PINNING - SOT263B-01
PIN
1
2
3
4
5
tab
DESCRIPTION
Ground
Input
Battery
(+ve supply)
Status
PIN CONFIGURATION
mb
mb
SYMBOL
I
S
12345
B
TOPFET
HSS
G
L
Load
connected to pin 3
Front view
MBL267
Fig. 2.
Fig. 3.
July 2001
1
Rev 1.000
Philips Semiconductors
Product Specification
PowerMOS transistor
TOPFET high side switch
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
BG
I
L
P
D
T
stg
T
j
T
sold
PARAMETER
Continuous supply voltage
Continuous load current
Total power dissipation
Storage temperature
Continuous junction temperature
1
Lead temperature
Reverse battery voltages
2
-V
BG
-V
BG
Continuous reverse voltage
Peak reverse voltage
Application information
R
I
, R
S
External resistors
3
Input and status
I
I
, I
S
I
I
, I
S
Continuous currents
Repetitive peak currents
Inductive load clamping
E
BL
Non-repetitive clamping energy
δ ≤
0.1, tp = 300
µs
I
L
= 1 A, V
BG
= 16 V
T
j
= 150˚C prior to turn-off
-
-5
-50
to limit input, status currents
3.2
-
-
-
during soldering
T
mb
≤
114˚C
T
mb
≤
25˚C
CONDITIONS
MIN.
0
-
-
-55
-
-
PIP3208-A
MAX.
50
6
41
175
150
260
UNIT
V
A
W
˚C
˚C
˚C
16
32
V
V
kΩ
5
50
mA
mA
75
mJ
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
2
UNIT
kV
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance
4
R
th j-mb
R
th j-a
Junction to mounting base
Junction to ambient
-
in free air
-
-
2.5
60
3
75
K/W
K/W
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1
For normal continuous operation. A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates
to protect the switch.
2
Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must
limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the T
j
rating must be observed.
3
To limit currents during reverse battery and transient overvoltages (positive or negative).
4
Of the output power MOS transistor.
July 2001
2
Rev 1.000
Philips Semiconductors
Product Specification
PowerMOS transistor
TOPFET high side switch
STATIC CHARACTERISTICS
Limits are at -40˚C
≤
T
mb
≤
150˚C and typicals at T
mb
= 25 ˚C unless otherwise stated.
SYMBOL
V
BG
V
BL
-V
LG
-V
LG
PARAMETER
Clamping voltages
Battery to ground
Battery to load
Negative load to ground
Negative load voltage
1
Supply voltage
V
BG
Operating range
2
Currents
Quiescent current
3
Off-state load current
4
Operating current
5
6
PIP3208-A
CONDITIONS
I
G
= 1 mA
I
L
= I
G
= 1 mA
I
L
= 10 mA
I
L
= 1 A; t
p
= 300
µs
battery to ground
-
9 V
≤
V
BG
≤
16 V
V
LG
= 0 V
T
mb
= 25˚C
V
BL
= V
BG
T
mb
= 25˚C
I
L
= 0 A
V
BL
= 0.5 V
V
BG
9 to 35 V
6V
I
L
1A
1A
t
p
300
µs
300
µs
T
mb
25˚C
150˚C
25˚C
150˚C
MIN.
50
50
18
20
TYP.
55
55
23
25
MAX.
65
65
28
30
UNIT
V
V
V
V
5.5
-
35
V
µA
µA
µA
µA
mA
A
I
B
I
L
I
G
I
L
-
-
-
-
-
2
-
0.1
-
0.1
2
-
20
2
20
1
4
-
Nominal load current
Resistances
R
ON
R
ON
On-state resistance
7
On-state resistance
-
-
-
-
95
135
-
170
-
150
180
330
225
410
190
mΩ
mΩ
mΩ
mΩ
Ω
R
G
Internal ground resistance
I
G
= 10 mA
1
For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2
On-state resistance is increased if the supply voltage is less than 9 V.
3
This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4
The measured current is in the load pin only.
5
This is the continuous current drawn from the supply with no load connected, but with the input high.
6
Defined as in ISO 10483-1. For comparison purposes only.
7
The supply and input voltage for the R
ON
tests are continuous. The specified pulse duration t
p
refers only to the applied load current.
July 2001
3
Rev 1.000
Philips Semiconductors
Product Specification
PowerMOS transistor
TOPFET high side switch
INPUT CHARACTERISTICS
PIP3208-A
9 V
≤
V
BG
≤
16 V. Limits are at -40˚C
≤
T
mb
≤
150˚C and typicals at T
mb
= 25 ˚C unless otherwise stated.
SYMBOL
I
I
V
IG
V
IG(ON)
V
IG(OFF)
∆V
IG
I
I(ON)
I
I(OFF)
PARAMETER
Input current
Input clamping voltage
Input turn-on threshold voltage
Input turn-off threshold voltage
Input turn-on hysteresis
Input turn-on current
Input turn-off current
V
IG
= 3 V
V
IG
= 1.5 V
CONDITIONS
V
IG
= 5 V
I
I
= 200
µA
MIN.
20
5.5
-
1.5
-
-
10
TYP.
90
7
2.4
2.1
0.3
-
-
MAX.
160
8.5
3
-
-
100
-
UNIT
µA
V
V
V
V
µA
µA
STATUS CHARACTERISTICS
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
Limits are at -40˚C
≤
T
mb
≤
150˚C and typicals at T
mb
= 25 ˚C unless otherwise stated. Refer to
TRUTH TABLE
.
SYMBOL
V
SG
V
SG
PARAMETER
Status clamping voltage
Status low voltage
CONDITIONS
I
S
= 100
µA
I
S
= 100
µA
T
mb
= 25˚C
I
S
I
S
Status leakage current
Status saturation current
1
MIN.
5.5
-
-
-
-
2
TYP.
7
-
0.7
-
0.1
7
MAX.
8.5
1
0.8
15
1
12
UNIT
V
V
V
µA
µA
mA
V
SG
= 5 V
T
mb
= 25˚C
V
SG
= 5 V
Application information
R
S
External pull-up resistor
-
47
-
kΩ
OPEN CIRCUIT DETECTION CHARACTERISTICS
An open circuit load can be detected in the on-state. Refer to
TRUTH TABLE
.
Limits are at -40˚C
≤
T
mb
≤
150˚C and typical is at T
mb
= 25 ˚C.
SYMBOL
PARAMETER
Open circuit detection
I
L(TO)
∆I
L(TO)
Low current detect threshold
T
j
= 25˚C
Hysteresis
CONDITIONS
9 V
≤
V
BG
≤
35 V
50
85
-
-
170
30
340
255
-
mA
mA
mA
MIN.
TYP.
MAX.
UNIT
1
In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to
prevent possible interference with normal operation of the device.
July 2001
4
Rev 1.000
Philips Semiconductors
Product Specification
PowerMOS transistor
TOPFET high side switch
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C
≤
T
mb
≤
150˚C and typicals at T
mb
= 25 ˚C. Refer to
TRUTH TABLE
.
SYMBOL
PARAMETER
Undervoltage
V
BG(UV)
∆V
BG(UV)
Low supply threshold voltage
1
Hysteresis
Overvoltage
V
BG(OV)
∆V
BG(OV)
High supply threshold voltage
2
Hysteresis
40
-
45
1
2
-
4.2
0.5
CONDITIONS
MIN.
TYP.
PIP3208-A
MAX.
UNIT
5.5
-
V
V
50
-
V
V
TRUTH TABLE
ABNORMAL CONDITIONS
DETECTED
INPUT
L
H
H
H
H
H
H
SUPPLY
UV
X
0
0
1
0
0
0
OV
X
0
0
0
1
0
0
LC
X
0
1
X
X
0
0
LOAD
SC
X
0
0
X
0
1
0
OT
X
0
0
X
0
X
1
OFF
ON
ON
OFF
OFF
OFF
OFF
H
H
L
H
H
L
L
off
on & normal
on & low current detect
supply undervoltage lockout
supply overvoltage shutdown
SC tripped
OT shutdown
3
LOAD
OUTPUT
STATUS
DESCRIPTION
KEY TO ABBREVIATIONS
L
H
X
0
1
logic low
logic high
don’t care
condition not present
condition present
UV
OV
LC
SC
OT
undervoltage
overvoltage
low current or open circuit load
short circuit
overtemperature
1
Undervoltage sensor causes the device to switch off and reset.
2
Overvoltage sensor causes the device to switch off to protect its load.
3
The status will continue to indicate OT (even if the input goes low) until the device cools below the reset threshold. Refer to
OVERLOAD
PROTECTION CHARACTERISTICS
.
July 2001
5
Rev 1.000
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