MOSFET N-CH 200V 21.1A DPAK
| Parameter Name | Attribute value |
| Brand Name | NXP Semiconductor |
| Is it Rohs certified? | conform to |
| Maker | NXP |
| Parts packaging code | DPAK |
| package instruction | PLASTIC, SC-63, DPAK-3 |
| Contacts | 3 |
| Manufacturer packaging code | SOT428 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Avalanche Energy Efficiency Rating (Eas) | 150 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V |
| Maximum drain current (ID) | 21.1 A |
| Maximum drain-source on-resistance | 0.12 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-252 |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 42.2 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| PHD22NQ20T,118 | PHD22NQ20T | |
|---|---|---|
| Description | MOSFET N-CH 200V 21.1A DPAK | TRANSISTOR 21.1 A, 200 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power |
| Is it Rohs certified? | conform to | conform to |
| Maker | NXP | NXP |
| Parts packaging code | DPAK | TO-252 |
| package instruction | PLASTIC, SC-63, DPAK-3 | PLASTIC, SC-63, DPAK-3 |
| Contacts | 3 | 3 |
| Reach Compliance Code | unknown | not_compliant |
| ECCN code | EAR99 | EAR99 |
| Is Samacsys | N | N |
| Avalanche Energy Efficiency Rating (Eas) | 150 mJ | 150 mJ |
| Shell connection | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V | 200 V |
| Maximum drain current (ID) | 21.1 A | 21.1 A |
| Maximum drain-source on-resistance | 0.12 Ω | 0.12 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-252 | TO-252 |
| JESD-30 code | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609 code | e3 | e3 |
| Humidity sensitivity level | 1 | 1 |
| Number of components | 1 | 1 |
| Number of terminals | 2 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 42.2 A | 42.2 A |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal surface | TIN | Matte Tin (Sn) |
| Terminal form | GULL WING | GULL WING |
| Terminal location | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
| Base Number Matches | 1 | 1 |
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