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IKU15N60RBKMA1

Description
IGBT 600V 30A 250W TO251-3
CategoryDiscrete semiconductor    The transistor   
File Size2MB,17 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IKU15N60RBKMA1 Overview

IGBT 600V 30A 250W TO251-3

IKU15N60RBKMA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeTO-251
package instructionGREEN, PLASTIC, IPAK-3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)30 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JEDEC-95 codeTO-251
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)430 ns
Nominal on time (ton)26 ns
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IKU15N60RBKMA1 Related Products

IKU15N60RBKMA1 IKD15N60R
Description IGBT 600V 30A 250W TO251-3 IGBT Transistors IGBT PRODUCTS
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Parts packaging code TO-251 TO-252
package instruction GREEN, PLASTIC, IPAK-3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3
Reach Compliance Code unknown compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 30 A 30 A
Collector-emitter maximum voltage 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
JEDEC-95 code TO-251 TO-252
JESD-30 code R-PSIP-T3 R-PSSO-G2
Number of components 1 1
Number of terminals 3 2
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON
Nominal off time (toff) 430 ns 430 ns
Nominal on time (ton) 26 ns 26 ns
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