IKP03N120H2
IKW03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled
HE diode
C
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
2 generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
-
E
off
optimized for
I
C
=3A
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
V
CE
1200V
1200V
I
C
3A
3A
E
off
0.15mJ
0.15mJ
T
j
150C
150°C
Marking
K03H1202
K03H1202
Package
PG-TO-247-3
PG-TO-220-3-1
2
nd
G
E
PG-TO-247-3
PG-TO-220-3-1
Type
IKW03N120H2
IKP03N120H2
Maximum Ratings
Parameter
Symbol
V
CE
I
C
Value
1200
9.6
3.9
Unit
V
A
Collector-emitter voltage
Triangular collector current
T
C
= 25C,
f
= 140kHz
T
C
= 100C,
f
= 140kHz
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
1200V,
T
j
150C
Diode forward current
T
C
= 25C
T
C
= 100C
Gate-emitter voltage
Power dissipation
T
C
= 25C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
I
Cpul s
-
I
F
9.9
9.9
9.6
3.9
V
GE
P
tot
T
j
,
T
stg
-
20
62.5
-40...+150
260
V
W
C
1
J-STD-020 and JESD-022
1
Rev. 2.6 17.07.2013
Power Semiconductors
IKP03N120H2
IKW03N120H2
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction - case
Thermal resistance,
junction – ambient
R
thJA
P-TO-220-3-1
P-TO-247-3-21
62
R
thJCD
3.2
R
thJC
2.0
K/W
Symbol
Conditions
Max. Value
Unit
Electrical Characteristic,
at
T
j
= 25
C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 3 00
A
V
CE(sat)
V
G E
= 15 V ,
I
C
= 3 A
T
j
=2 5
C
T
j
=1 5 0 C
V
G E
= 10 V ,
I
C
= 3 A,
T
j
=2 5
C
Diode forward voltage
V
F
V
G E
= 0,
I
F
= 2 A
T
j
=2 5
C
T
j
=1 5 0 C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 90
A
,
V
C E
=
V
G E
V
C E
= 12 0 0V ,
V
G E
= 0V
T
j
=2 5
C
T
j
=1 5 0 C
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
C
iss
C
oss
C
rss
Q
Gate
L
E
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
V
C C
= 96 0 V,
I
C
=3 A
V
G E
= 15 V
PG - T O - 2 2 0- 3 - 1
PG-TO-247-3-21
-
-
7
13
-
-
nH
-
-
-
-
205
24
7
22
-
-
-
-
nC
pF
I
GES
g
fs
V
C E
= 0V ,
V
G E
=2 0 V
V
C E
= 20 V ,
I
C
= 3 A
-
-
-
-
-
-
-
2
20
80
100
-
nA
S
-
-
2.1
2.0
1.75
3
2.5
-
3.9
A
-
-
-
2.2
2.5
2.4
2.8
-
-
1200
-
-
V
Symbol
Conditions
Value
min.
Typ.
max.
Unit
Power Semiconductors
2
Rev. 2.6 17.07.2013
IKP03N120H2
IKW03N120H2
Switching Characteristic, Inductive Load,
at
T
j
=25
C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rrm
di
F
/dt
d i
r r
/d t
T
j
=2 5
C
,
V
R
= 8 00 V ,
I
F
= 3 A,
R
G
= 82
-
-
-
-
-
42
0.23
10.3
993
1180
-
-
-
-
-
ns
µC
A
A/s
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=2 5
C
,
V
C C
= 80 0 V,
I
C
=3 A ,
V
G E
= 15 V /0 V ,
R
G
= 82
,
2)
L
=1 8 0n H,
2)
C
= 4 0p F
Energy losses include
3)
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
9.2
5.2
281
29
0.14
0.15
0.29
-
-
-
-
-
-
-
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Switching Characteristic, Inductive Load,
at
T
j
=150
C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=1 5 0 C
V
C C
= 80 0 V,
I
C
= 3 A,
V
G E
= 15 V /0 V ,
R
G
= 82
,
2)
L
=1 8 0n H,
2)
C
= 4 0p F
Energy losses include
3)
“tail” and diode
reverse recovery.
T
j
=1 5 0 C
V
R
= 8 00 V ,
I
F
= 3 A,
R
G
= 82
-
-
-
-
-
-
-
9.4
6.7
340
63
0.22
0.26
0.48
-
-
-
-
-
-
-
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rrm
di
F
/dt
d i
r r
/d t
-
-
-
-
-
125
0.51
12
829
540
-
-
-
-
-
ns
µC
A
A/s
2)
3)
Leakage inductance L
and stray capacity C
due to dynamic test circuit in figure E
Commutation diode from device IKP03N120H2
3
Rev. 2.6 17.07.2013
Power Semiconductors
IKP03N120H2
IKW03N120H2
Switching Energy ZVT, Inductive Load
Parameter
IGBT Characteristic
Turn-off energy
E
off
V
C C
= 80 0 V,
I
C
= 3 A,
V
G E
= 15 V /0 V ,
R
G
= 82
,
C
r
=4 nF
T
j
=2 5
C
T
j
=1 5 0 C
-
-
0.05
0.09
-
-
2)
Symbol
Conditions
Value
min.
typ.
max.
Unit
mJ
Power Semiconductors
4
Rev. 2.6 17.07.2013
IKP03N120H2
IKW03N120H2
12A
I
c
10A
t
p
=1
s
10A
5
s
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
10
s
1A
50
s
100
s
0,1A
500
s
DC
8A
T
C
=80°C
6A
T
C
=110°C
4A
2A
I
c
100Hz
1kHz
10kHz
100kHz
0A
10Hz
0,01A
1V
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
150C,
D =
0.5,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 82)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25C,
T
j
150C)
12A
60W
10A
50W
P
tot
,
POWER DISSIPATION
I
C
,
COLLECTOR CURRENT
50°C
75°C
100°C
125°C
40W
8A
30W
6A
20W
4A
10W
2A
0W
25°C
0A
25°C
50°C
75°C
100°C
125°C
150°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
j
150C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
15V,
T
j
150C)
Power Semiconductors
5
Rev. 2.6 17.07.2013
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