1N6285 datasheet, PDF - EEWORLD Datasheet

1N6285: Description1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-201AE; CategoryDiscrete semiconductor diode; File Size99KB，3 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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1N6285 Overview

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-201AE

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Taiwan Semiconductor
package instruction	O-PALF-W2
Reach Compliance Code	compli
ECCN code	EAR99
Other features	UL RECOGNIZED
Maximum breakdown voltage	42.9 V
Minimum breakdown voltage	35.1 V
Breakdown voltage nominal value	39 V
Shell connection	ISOLATED
Maximum clamping voltage	56.4 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-201
JESD-30 code	O-PALF-W2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	1500 W
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	31.6 V
surface mount	NO
technology	AVALANCHE
Terminal surface	PURE TIN
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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