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UPT10R/TR13

Description
TVS DIODE 10V 18V POWERMITE 1
CategoryCircuit protection   
File Size286KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

UPT10R/TR13 Overview

TVS DIODE 10V 18V POWERMITE 1

UPT10R/TR13 Parametric

Parameter NameAttribute value
typeZina
One way channel1
Voltage - Reverse OFF (Typical)10V
Voltage - Breakdown (minimum)11V
电压 - 箝位(最大值)@ Ipp18V
Current - Peak Pulse (10/1000µs)8.33A
Power - Peak Pulse1000W(1kW)
Power line protectionnone
applicationUniversal
Capacitance at different frequencies-
Operating temperature-65°C ~ 150°C(TJ)
Installation typesurface mount
Package/casingDO-216AA
Supplier device packagingPowermite 1(DO216-AA)
UPT5e3 – UPT48e3, UPT8Re3 – UPT48Re3
and UPTB5e3 – UPTB48e3
Available
5V – 48V Small Footprint, Surface Mount
Transient Voltage Suppressors
DESCRIPTION
Microsemi’s unique and new Powermite UPT series of transient voltage suppressors feature oxide-
passivated chips with high-temperature solder bonds for high surge capability and negligible
electrical degradation under repeated surge conditions. Both unidirectional and bidirectional
configurations are available. In addition to its size advantages, the Powermite package includes a
fully metallic bottom (cathode) side that eliminates the possibility of solder flux entrapment at
assembly and a unique locking tab serves as an integral heat sink. Its innovative design makes this
device fully compatible for use with automatic insertion equipment.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Powermite package with standoff voltages 5 to 48 V.
Both unidirectional and bidirectional polarities:
-Anode to case bottom (UPT5e3 thru UPT48e3)
-Cathode to case bottom (UPT8Re3 thru UPT48Re3)
-Bidirectional (UPTB5e3 thru UPTB48e3)
Clamping time less than 100 pico-seconds for unidirectional and 5 nano-seconds for bidirectional.
100% surge current testing of all parts.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B.
RoHS compliant versions available.
DO-216AA
Package
APPLICATIONS / BENEFITS
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T L, etc.
Protection from switching and induced RF transients.
New improved lower leakage current for the UPT8Re3:
-Integral heat sink / locking tabs
-Fully metallic bottom side eliminates flux entrapment
Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively.
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
Class 1: UPT5//UPT5R/UPTB8 to17
Class 2: UPT5//UPT5R/UPTB5 to12
Class 3: Class 4
2
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case (base tab)
Peak Pulse Power (see
Figure 1
and
Figure 2)
UPT8Re3:
UPT5e3 thru UPT48e3:
UPT8Re3 thru UPT48Re3:
UPTB5e3 thru UPTB48e3:
Rated Average Power Dissipation
o
(base tab < 112 C)
Impulse Repetition Rate (duty factor)
Solder Temperature @ 10 s
Symbol
T
J
/ T
STG
R
ӨJA
R
ӨJC
P
PP
Value
-65 to +150
240
15
@ 8/20 µs @10/1000µs
600
100
1000
150
1000
150
1000
150
2.5
0.01
260
Unit
C
C/W
o
C/W
o
o
W
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
P
M(AV)
W
%
C
T
SP
o
Tel:
Notes:
1. When mounted on FR4 PC board with 1 oz copper.
RF01103, Rev. B (5/22/17)
©2017 Microsemi Corporation
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