Doc No.
TT4-EA-12708
Revision.
3
Product Standards
Zener Diode
DZ5S100D0R
DZ5S100D0R
Silicon epitaxial planar type
For surge absorption circuit
DZ5J100D in SSMini5 type package
Features
Excellent rising characteristics of zener current Iz
Low zener operating resistance Rz
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1
2
3
5
Unit: mm
1.6
0.2
4
0.13
1.2
1.6
(0.6)
(0.5) (0.5)
1.0
Marking Symbol:04
Basic Part Number :
Dual DZ3X100D (Common anode)
Packaging
Embossed type (Thermo-compression sealing)
8 000 pcs / reel (standard)
1. Cathode1
4 Cathode3
2.
Anode1,2,3,4
5. Cathode4
3. Cathode2
Panasonic
JEITA
Code
SSMini5-F4-B
SC-107BB
SOT-665
Absolute Maximum Ratings Ta = 25
C
Parameter
Symbol
Total power dissipation
Electrostatic discharge
*2
Junction temperature
Operating ambient temperature
Storage temperature
*1
Rating
150
±10
150
-40 to +85
-55 to +150
Unit
mW
kV
°C
°C
°C
PT
ESD
Tj
Topr
Tstg
Internal Connection
5
4
Note) *1: Mounted on glass epoxy print board. ( 45 mm x 45 mm x 1 mm)
(4Diode total)
Solder in ( 0.35 mm x 0.40 mm)
*2:
Test method:IEC61000_4_2(C = 150 pF,R = 330
,
Contact discharge:10 times)
1
2
3
Electrical Characteristics Ta = 25
C
3
C
Parameter
Symbol
Forward voltage
*1, *2
Zener voltage
Zener operating resistance
Zener rise operating resistance
Reverse current
Temperature coefficient of zener voltage
VF
VZ
RZ
RZK
IR
SZ
Conditions
IF = 10 mA
IZ = 5 mA
IZ = 5 mA
IZ = 0.5 mA
VR = 7 V
IZ = 5 mA
Min
9.50
Typ Max
1.0
10.50
Unit
V
V
μA
mV/°C
30
60
0.05
6.5
*3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. *1: The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
*2: VZ guaranted 20 ms after current flow.
*3: Tj = 25°C to 150°C
Page 1 of 4
Established : 2010-08-05
Revised
: 2013-10-28
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