SSM6J207FE,LF datasheet, PDF - EEWORLD Datasheet

SSM6J207FE,LF: DescriptionMOSFET P-CH 30V 1.4A ES6; Categorysemiconductor Discrete semiconductor; File Size2MB，63 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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SSM6J207FE,LF Overview

MOSFET P-CH 30V 1.4A ES6

Parameter Name	Attribute value
FET type	P channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	30V
Current - Continuous Drain (Id) at 25°C	1.4A（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	4V，10V
Rds On (maximum value) when different Id, Vgs	251 milliohms @ 650mA, 10V
Vgs (th) (maximum value) when different Id	2.6V @ 1mA
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	137pF @ 15V
FET function	-
Power dissipation (maximum)	500mW（Ta）
Operating temperature	150°C（TJ）
Installation type	surface mount
Supplier device packaging	ES6（1.6x1.6）
Package/casing	SOT-563，SOT-666

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