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1ZB15

Description
200 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size200KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

1ZB15 Overview

200 W, UNIDIRECTIONAL, SILICON, TVS DIODE

1ZB15 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionLEAD FREE, PLASTIC, 3-3F2A, 2 PIN
Contacts2
Reach Compliance Codeunknow
Maximum breakdown voltage16.5 V
Minimum breakdown voltage13.5 V
Breakdown voltage nominal value15 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak reverse power dissipation200 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
Maximum reverse current10 µA
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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