UH1BHE3/61T datasheet, PDF - EEWORLD Datasheet

UH1BHE3/61T: DescriptionDIODE GEN PURP 100V 1A DO214AC; CategoryDiscrete semiconductor diode; File Size205KB，7 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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UH1BHE3/61T Overview

DIODE GEN PURP 100V 1A DO214AC

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	R-PDSO-C2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	FREE WHEELING DIODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.9 V
JEDEC-95 code	DO-214AC
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	30 A
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Guideline	AEC-Q101
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	0.025 µs
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	30
Base Number Matches	1

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