4 A, 55 V, NPN, Si, POWER TRANSISTOR, TO-3
Parameter Name | Attribute value |
Number of terminals | 2 |
Transistor polarity | NPN |
Maximum collector current | 4 A |
Maximum Collector-Emitter Voltage | 55 V |
Processing package description | TO-3, 2 PIN |
state | ACTIVE |
packaging shape | ROUND |
Package Size | FLANGE MOUNT |
Terminal form | PIN/PEG |
terminal coating | TIN LEAD |
Terminal location | BOTTOM |
Packaging Materials | METAL |
structure | SINGLE |
Number of components | 1 |
Transistor component materials | SILICON |
Transistor type | GENERAL PURPOSE POWER |
Minimum DC amplification factor | 25 |
Rated crossover frequency | 0.0300 MHz |