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2SB736BW3

Description
300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size175KB,4 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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2SB736BW3 Overview

300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR

2SB736BW3 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current0.3000 A
Maximum Collector-Emitter Voltage80 V
Processing package descriptionPlastic, SC-59, 3 PIN
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsamplifier
Transistor component materialssilicon
Maximum ambient power consumption0.2000 W
Transistor typeUniversal small signal
Minimum DC amplification factor30
Rated crossover frequency100 MHz

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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