PMCXB900UEZ datasheet, PDF - EEWORLD Datasheet

PMCXB900UEZ: DescriptionMOSFET N/P-CH 20V 0.6A/0.5A 6DFN; Categorysemiconductor Discrete semiconductor; File Size788KB，20 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com; Environmental Compliance

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MOSFET N/P-CH 20V 0.6A/0.5A 6DFN

Parameter Name	Attribute value
FET type	N and P channel complementary type
FET function	logic level gate
Drain-source voltage (Vdss)	20V
Current - Continuous Drain (Id) at 25°C	600mA，500mA
Rds On (maximum value) when different Id, Vgs	620 milliohms @ 600mA, 4.5V
Vgs (th) (maximum value) when different Id	950mV @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	0.7nC @ 4.5V
Input capacitance (Ciss) at different Vds (maximum value)	21.3pF @ 10V
Power - Max	265mW
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	surface mount
Package/casing	6-XFDFN Exposed Pad
Supplier device packaging	6-DFN（1.1x1）

	PMCXB900UEZ	934067143147
Description	MOSFET N/P-CH 20V 0.6A/0.5A 6DFN	MOSFET N/P-CH 20V 0.6A/0.5A 6DFN

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