MOSFET N-CH 30V SOT23
Parameter Name | Attribute value |
Brand Name | Nexperia |
Maker | Nexperia |
Parts packaging code | TO-236 |
Contacts | 3 |
Manufacturer packaging code | SOT23 |
Reach Compliance Code | compliant |
Samacsys Description | Trans MOSFET N-CH 30V 5.7A 3-Pin TO-236AB |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 30 V |
Maximum drain current (ID) | 5.7 A |
Maximum drain-source on-resistance | 0.023 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-236AB |
JESD-30 code | R-PDSO-G3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 |
Polarity/channel type | N-CHANNEL |
Guideline | IEC-60134 |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | DUAL |
Maximum time at peak reflow temperature | 30 |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
PMV20XNER | 934068845215 | |
---|---|---|
Description | MOSFET N-CH 30V SOT23 | MOSFET N-CH 30V SOT23 |
Reach Compliance Code | compliant | compliant |
Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 30 V | 30 V |
Maximum drain current (ID) | 5.7 A | 5.7 A |
Maximum drain-source on-resistance | 0.023 Ω | 0.023 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-236AB | TO-236AB |
JESD-30 code | R-PDSO-G3 | R-PDSO-G3 |
Humidity sensitivity level | 1 | 1 |
Number of components | 1 | 1 |
Number of terminals | 3 | 3 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL | N-CHANNEL |
Guideline | IEC-60134 | IEC-60134 |
surface mount | YES | YES |
Terminal form | GULL WING | GULL WING |
Terminal location | DUAL | DUAL |
Maximum time at peak reflow temperature | 30 | NOT SPECIFIED |
transistor applications | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON |