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PMV20XNER

Description
MOSFET N-CH 30V SOT23
CategoryDiscrete semiconductor    The transistor   
File Size713KB,15 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
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MOSFET N-CH 30V SOT23

PMV20XNER Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeTO-236
Contacts3
Manufacturer packaging codeSOT23
Reach Compliance Codecompliant
Samacsys DescriptionTrans MOSFET N-CH 30V 5.7A 3-Pin TO-236AB
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)5.7 A
Maximum drain-source on-resistance0.023 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
GuidelineIEC-60134
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON

PMV20XNER Related Products

PMV20XNER 934068845215
Description MOSFET N-CH 30V SOT23 MOSFET N-CH 30V SOT23
Reach Compliance Code compliant compliant
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (ID) 5.7 A 5.7 A
Maximum drain-source on-resistance 0.023 Ω 0.023 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Guideline IEC-60134 IEC-60134
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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