NTE2362 datasheet, PDF - EEWORLD Datasheet

NTE2362: DescriptionRF SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size21KB，2 Pages; ManufacturerNTE; Websitehttp://www.nteinc.com

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NTE2362 Overview

RF SMALL SIGNAL TRANSISTOR

Parameter Name	Attribute value
Maker	NTE
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz

	NTE2362	NTE2361
Description	RF SMALL SIGNAL TRANSISTOR	RF SMALL SIGNAL TRANSISTOR
Maker	NTE	NTE
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	200	200
JESD-30 code	O-PBCY-T3	O-PBCY-T3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	NPN
Maximum power dissipation(Abs)	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	300 MHz	200 MHz

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