5000 W, BIDIRECTIONAL, SILICON, TVS DIODE
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | EIC [EIC discrete Semiconductors] |
| package instruction | O-PALF-W2 |
| Contacts | 2 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Maximum breakdown voltage | 196 V |
| Minimum breakdown voltage | 178 V |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 code | O-PALF-W2 |
| JESD-609 code | e3 |
| Maximum non-repetitive peak reverse power dissipation | 5000 W |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -55 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | LONG FORM |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| polarity | BIDIRECTIONAL |
| Maximum power dissipation | 8 W |
| Maximum repetitive peak reverse voltage | 160 V |
| surface mount | NO |
| technology | AVALANCHE |
| Terminal surface | Tin (Sn) |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Base Number Matches | 1 |
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