7MBR100U2B060
IGBT MODULE (U series)
600V / 100A / PIM
IGBT Modules
Features
· Low V
CE
(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Inverter
Symbol
V
CES
V
GES
I
C
I
CP
-I
C
-I
C
pulse
P
C
V
CES
V
GES
I
C
I
CP
P
C
V
RRM
V
RRM
I
O
I
FSM
I
2
t
Condition
Rating
600
±20
Continuous
1ms
1ms
1 device
Collector current
100
200
100
200
378
600
±20
50
100
187
600
800
100
700
2450
+150
-40 to +125
AC 2500
AC 2500
3.5 *
1
Unit
V
V
A
A
A
W
V
V
A
A
W
V
V
A
A
A
2
s
°C
°C
V
V
N·m
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage
Converter
Brake
Continuous
1ms
1 device
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
It
2
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
(Non-Repetitive)
T
j
T
stg
Isolation between terminal and copper base *2 V
iso
voltage between thermistor and others *3
Mounting screw torque
Operating junction temperature
Storage temperature
AC : 1 minute
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Two thermistor terminals should be connected together, each other terminals should be
connected together and shorted to base plate when isolation test will be done.
IGBT Module
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
(terminal)
V
CE(sat)
(chip)
C
ies
t
on
t
r
t
r(i)
t
off
t
f
V
F
(terminal)
V
F
(chip)
t
rr
I
CES
I
GES
V
CE(sat)
(terminal)
V
CE(sat)
(chip)
t
on
t
r
t
off
t
f
I
RRM
V
FM
I
RRM
R
B
Symbol
Condition
Min.
V
CE
=600V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=100mA
Tj=25°C
V
GE
=15V
Tj=125°C
Ic=100A
Tj=25°C
Tj=125°C
V
GE
=0V, V
CE
=10V, f=1MHz
V
CC
=300V
I
C
=100A
V
GE
=±15V
R
G
=33Ω
V
GE
=0V
I
F
=100A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
6.2
7MBR100U2B060
Characteristics
Typ.
Max.
1.0
200
6.7
2.30
2.50
1.85
2.00
8.4
0.51
0.22
0.16
0.58
0.07
2.10
2.40
1.60
1.65
7.7
2.60
Unit
mA
nA
V
V
Inverter
Input capacitance
Turn-on time
1.20
0.60
1.20
0.45
2.40
nF
µs
Turn-off time
Forward on voltage
V
Reverse recovery time
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Brake
I
F
=100A
V
CE
=600V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
Tj=25°C
I
C
=50A
Tj=125°C
V
GE
=15V
Tj=25°C
Tj=125°C
V
CC
=300V
I
C
=50A
V
GE
=±15V
R
G
=68Ω
V
R
=600V
I
F
=100A
V
GE
=0V
V
R
=800V
T=25°C
T=100°C
T=25/50°C
Condition
Min.
Inverter IGBT
Inverter FWD
Brake IGBT
Converter Diode
With thermal compound
2.10
2.40
1.85
2.15
0.42
0.24
0.42
0.03
0.35
1.0
200
2.40
µs
mA
nA
V
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
1.20
0.60
1.20
0.45
1.0
1.50
1.0
µs
Converter
terminal
chip
1.20
1.10
5000
465
3305
495
3375
mA
V
mA
Ω
K
Unit
Thermistor
520
3450
Thermal resistance Characteristics
Item
Characteristics
Typ.
Max.
0.33
0.67
0.67
0.47
0.05
°C/W
Thermal resistance ( 1 device )
Rth(j-c)
Contact thermal resistance
*
Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
[Converter]
21(P)
[Brake]
22(P1)
[Inverter]
[Thermistor]
8
20(Gu)
18(Gv)
16(Gw)
9
1(R)
2(S)
3(T)
7(B)
19(Eu)
4(U)
17(Ev)
5(V)
15(Ew)
6(W)
14(Gb)
13(Gx)
12(Gy)
11(Gz)
10(En)
23(N)
24(N1)
IGBT Module
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
250
VGE=20V 15V 12V
200
Collector current : Ic [A]
10
150
Collector current : Ic [A]
200
250
7MBR100U2B060
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
VGE=20V 15V 12V
10V
150
100
100
8V
50
8V
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
50
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
250
Tj=25°C
Tj=125°C
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
200
Collector current : Ic [A]
8
150
6
100
4
Ic=200A
Ic=100A
Ic= 50A
50
2
0
0
1
2
3
4
0
5
10
15
20
25
Collector-Emitter voltage : VCE [V]
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
100.00
Collector-Emitter voltage : VCE [ V ]
500
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=100A, Tj= 25°C
25
[V]
Gate - Emitter voltage : VGE
Capacitance : Cies, Coes, Cres [ nF ]
400
20
10.00
Cies
300
VGE
200
15
Coes
1.00
Cres
10
100
VCE
5
0.10
0
10
20
30
0
0
100
200
300
400
500
0
Collector-Emitter voltage : VCE [V]
Gate charge : Qg [ nC ]
IGBT Module
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=33Ω, Tj= 25°C
10000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
10000
7MBR100U2B060
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=33Ω, Tj=125°C
1000
toff
ton
tr
tf
1000
toff
tr
100
ton
100
tf
10
0
50
100
150
200
Collector current : Ic [ A ]
10
0
50
100
150
200
Collector current : Ic [ A ]
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=300V, Ic=100A, VGE=±15V, Tj= 25°C
10000
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
10
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=33Ω
8
Eon(125°C)
Eoff(125°C)
Eon(25°C)
1000
toff
ton
100
tr
6
tf
4
Eoff(25°C)
2
Err(125°C)
Err(25°
0
0
50
100
150
200
10
10
100
Gate resistance : Rg [
Ω
]
1000
Collector current : Ic [ A ]
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=300V, Ic=100A, VGE=±15V, Tj= 125°C
15
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Eon
10
Collector current : Ic [ A ]
[ Inverter ]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 33Ω ,Tj <= 125°C
250
200
150
Eoff
5
100
50
Err
0
10
100
Gate resistance : Rg [
Ω
]
1000
0
0
200
400
600
800
Collector - Emitter voltage : VCE [ V ]
IGBT Module
7MBR100U2B060
Forward current vs. Forward on voltage (ty p.)
chip
250
1000
Reverse recovery characteristics (ty p.)
Vcc=300V, VGE=±15V, Rg=33
Ω
200
Forward current : IF [ A ]
150
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
T j=25°C
T j=125°C
100
trr (125°C)
Irr (125°C)
Irr (25°C)
100
50
trr (25°C)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Forward on volt age : VF [ V ]
10
0
50
100
150
200
Forward current : IF [ A ]
[ Converter ]
Forward current vs. Forward on voltage (ty p.)
chip
250
200
Forward current : IF [ A ]
150
100
T j=125°C
50
T j=25°C
0
0.0
0.5
1.0
1.5
2.0
Forward on volt age : VFM [ V ]
[ Thermistor ]
Temp erature characteristic (ty p.)
100
Transient thermal resistance (max.)
10.000
Thermal resistanse : Rth(j-c) [ °C/W ]
1.000
Resistance : R [ kΩ ]
FWD[Inverter], IGBT[Brake]
10
IGBT[Inverter]
Conv.Diode
0.100
1
0.010
0.001
0.1
0.010
0.100
1.000
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
Pulse width : Pw [ sec ]
T emperat ure [°C ]
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