TPW1R005PL,L1Q datasheet, PDF - EEWORLD Datasheet

TPW1R005PL,L1Q: DescriptionX35 PB-F POWER MOSFET TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size742KB，10 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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TPW1R005PL,L1Q Overview

X35 PB-F POWER MOSFET TRANSISTOR

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	45V
Current - Continuous Drain (Id) at 25°C	300A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	4.5V，10V
Vgs (th) (maximum value) when different Id	2.4V @ 1mA
Gate charge (Qg) at different Vgs (maximum value)	122nC @ 10V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	9600pF @ 22.5V
FET function	-
Power dissipation (maximum)	960mW（Ta）, 170W（Tc）
Operating temperature	175°C
Installation type	surface mount
Supplier device packaging	8-DSOP Advance
Package/casing	8-PowerVDFN

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