TSM480P06CH X0G datasheet, PDF

TSM480P06CH X0G: DescriptionMOSFET P-CHANNEL 60V 20A TO251; Categorysemiconductor Discrete semiconductor; File Size883KB，9 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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TSM480P06CH X0G Overview

MOSFET P-CHANNEL 60V 20A TO251

Parameter Name	Attribute value
FET type	P channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	60V
Current - Continuous Drain (Id) at 25°C	20A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	4.5V，10V
Rds On (maximum value) when different Id, Vgs	48 milliohms @ 8A, 10V
Vgs (th) (maximum value) when different Id	2.2V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	22.4nC @ 10V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	1250pF @ 30V
FET function	-
Power dissipation (maximum)	66W（Tc）
Operating temperature	-50°C ~ 150°C（TJ）
Installation type	Through hole
Supplier device packaging	TO-251（IPAK）
Package/casing	TO-251-3 stubbed lead, IPak

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