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SMCJ58CAHM6G

Description
TVS DIODE 58V 93.6V DO214AB
CategoryDiscrete semiconductor    diode   
File Size298KB,8 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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SMCJ58CAHM6G Overview

TVS DIODE 58V 93.6V DO214AB

SMCJ58CAHM6G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionR-PDSO-C2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage71.2 V
Minimum breakdown voltage64.4 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityBIDIRECTIONAL
Maximum power dissipation5 W
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage58 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature30
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