BPW38
HERMETIC SILICON PHOTODARLINGTON
PACKAGE DIMENSIONS
FEATURES
• Hermetically sealed package
• Narrow reception angle
0.209 (5.31)
0.184 (4.67)
• European “Pro Electron” registered
DESCRIPTION
0.030 (0.76)
NOM
0.255 (6.48)
• The BPW38 is a silicon photodarlington
mounted in narrow angle TO-18 package.
0.50 (12.7)
MIN
SCHEMATIC
C
0.020 (0.51) 3X
Base
0.100 (2.54)
0.050 (1.27)
B
Emitter
Collector
(Case)
E
0.040 (1.02)
0.040 (1.02)
45°
Ø0.100 (2.54)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip
1/16”
(1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of
940 nm.
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(3,4,5 and 6)
Soldering Temperature (Flow)
(3,4 and 6)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Power Dissipation (T
A
= 25°C)
(1)
Power Dissipation (T
C
= 25°C)
(2)
(T
A
= 25°C unless otherwise specified)
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
V
CEO
V
CBO
V
EBO
P
D
P
D
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
25
25
12
300
600
Unit
°C
°C
°C
°C
V
V
V
mW
mW
2001 Fairchild Semiconductor Corporation
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BPW38
HERMETIC SILICON PHOTODARLINGTON
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
(T
A
=25°C) (All measurements made under pulse conditions)
SYMBOL
MIN
TYP
MAX
UNITS
Collector-Emitter Breakdown
Emitter-Base Breakdown
Collector-Base Breakdown
Collector-Emitter Leakage
Reception Angle at 1/2 Sensitivity
On-State Collector Current
Rise Time
Fall Time
I
C
= 10 mA, Ee = 0
I
E
= 100 µA, Ee = 0
I
C
= 100 µA, Ee = 0
V
CE
= 12 V, Ee = 0
Ee = 0.125 mW/cm
2
V
CE
= 5 V
(7)
I
C
= 10 mA, V
CC
= 10 V
R
L
= 100
I
C
= 10 mA, V
CC
= 10 V
R
L
= 100
BV
CEO
BV
EBO
BV
CBO
I
CEO
25
12
25
—
—
—
—
—
—
±8
—
300
250
—
—
—
100
—
—
—
—
V
V
V
nA
Deg.
mA
µs
µs
I
C(ON)
t
r
t
f
7.5
—
—
TYPICAL PERFORMANCE CURVES
I
L/
I
L
@25˚C - RELATIVE LIGHT CURRENT
100
10
I
L
- NORMALIZED LIGHT CURRENT
Ee = 5.0 mW/cm
2
Ee = 2.0 mW/cm
2
10
Ee = 1.0 mW/cm
2
Ee = 0.5 mW/cm
2
1.0
Ee = 0.2 mW/cm
2
1.0
Ee = 0.1 mW/cm
2
Ee = 0.05 mW/cm
2
Normalized to:
V
CE
= 5 V
Ee = .2 mW/cm
2
0
5
10
15
20
25
30
35
0.1
Normalized to:
V
CE
= 5 V
Ee = 0.2 mW/cm
2
0.01
-50
-25
0
25
50
75
100
125
0.1
V
CE
- COLLECTOR TO EMITTER (V)
T
A
- TEMPERATURE (˚C)
Fig. 1 Light Current vs. Collector to Emitter Voltage
Fig. 2 Relative Light Current vs. Ambient Temperature
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BPW38
HERMETIC SILICON PHOTODARLINGTON
TYPICAL PERFORMANCE CURVES
1.0
110
100
RELATIVE SPECTRAL RESPONSE
0.9
RELATIVE AMPLITUDE
500
600
700
800
900
1000
1100
1200
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
400
90
80
70
60
50
40
30
20
10
0
-90˚
-70˚
-50˚
-30˚
-10˚
10˚
30˚
50˚
70˚
90˚
- WAVELENGTH - NANOMETERS
DEGREES
Fig. 3 Spectral Response Curve
Fig. 4 Angular Response
100
Load Resistance
10
BPW38
INPUT
LED
V
CC
1.0 V
90 %
OUTPUT
PULSE
I
L
- LIGHT CURRENT (mA)
100
10
Normalized to:
R
L
= 100
I
L
= 10 mA
10 %
I
1.0
1000
t
r
V
CC
= 10 V
0.1
0.01
0.1
1.0
10
100
t
s
R
L
OUTPUT
t
d
t
f
INPUT PULSE
t
ON
= t
d
+
t
r
t
OFF
=
t
s
+
t
f
RELATIVE SWITCHING SPEED
Fig. 5 Light Current vs. Relative Switching Speed
Fig. 6 Test Circuit and Voltage Waveforms
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BPW38
HERMETIC SILICON PHOTODARLINGTON
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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