MOSFET N-CH 30V 1.87A SOT883
| Parameter Name | Attribute value |
| Brand Name | Nexperia |
| Maker | Nexperia |
| Parts packaging code | DFN |
| package instruction | CHIP CARRIER, R-PBCC-N3 |
| Contacts | 3 |
| Manufacturer packaging code | SOT883 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 30 V |
| Maximum drain current (ID) | 1.87 A |
| Maximum drain-source on-resistance | 0.42 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PBCC-N3 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | CHIP CARRIER |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 3.74 A |
| surface mount | YES |
| Terminal surface | Tin (Sn) |
| Terminal form | NO LEAD |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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