ER1A-LTP datasheet, PDF - EEWORLD Datasheet

ER1A-LTP: DescriptionDIODE GEN PURP 50V 1A DO214AA; Categorysemiconductor Discrete semiconductor; File Size323KB，3 Pages; ManufacturerMicro Commercial Co; Environmental Compliance

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DIODE GEN PURP 50V 1A DO214AA

Parameter Name	Attribute value
Diode type	standard
Voltage - DC Reverse (Vr) (Maximum)	50V
Current - average rectification (Io)	1A
Voltage at different If - Forward (Vf	950mV @ 1A
speed	Fast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)	35ns
Current at different Vr - Reverse leakage current	5µA @ 50V
Capacitance at different Vr, F	15pF @ 4V，1MHz
Installation type	surface mount
Package/casing	DO-214AA，SMB
Supplier device packaging	DO-214AA（SMB）
Operating Temperature - Junction	-65°C ~ 175°C

	ER1A-LTP	ER1J-LTP	ER1B-LTP	ER1G-LTP	ER1D-LTP
Description	DIODE GEN PURP 50V 1A DO214AA	DIODE GEN PURP 600V 1A DO214AA	DIODE GEN PURP 100V 1A DO214AA	DIODE GEN PURP 400V 1A DO214AA	DIODE GEN PURP 200V 1A DO214AA
Diode type	standard	standard	standard	standard	standard
Voltage - DC Reverse (Vr) (Maximum)	50V	600V	100V	400V	200V
Current - average rectification (Io)	1A	1A	1A	1A	1A
Voltage at different If - Forward (Vf	950mV @ 1A	1.7V @ 1A	950mV @ 1A	1.25V @ 1A	950mV @ 1A
speed	Fast recovery = < 500 ns, > 200mA (Io)	Fast recovery = < 500 ns, > 200mA (Io)	Fast recovery = < 500 ns, > 200mA (Io)	Fast recovery = < 500 ns, > 200mA (Io)	Fast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)	35ns	35ns	35ns	35ns	35ns
Current at different Vr - Reverse leakage current	5µA @ 50V	5µA @ 600V	5µA @ 100V	5µA @ 400V	5µA @ 200V
Capacitance at different Vr, F	15pF @ 4V，1MHz	15pF @ 4V，1MHz	15pF @ 4V，1MHz	-	-
Installation type	surface mount	surface mount	surface mount	surface mount	surface mount
Package/casing	DO-214AA，SMB	DO-214AA，SMB	DO-214AA，SMB	DO-214AA，SMB	DO-214AA，SMB
Supplier device packaging	DO-214AA（SMB）	DO-214AA（SMB）	DO-214AA（SMB）	DO-214AA（SMB）	DO-214AA（SMB）
Operating Temperature - Junction	-65°C ~ 175°C	-65°C ~ 175°C	-65°C ~ 175°C	-65°C ~ 175°C	-65°C ~ 175°C

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