EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

SJPL-L4VL

Description
DIODE GEN PURP 400V 3A 2SMD
Categorysemiconductor    Discrete semiconductor   
File Size254KB,6 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Environmental Compliance
Download Datasheet Parametric Compare View All

SJPL-L4VL Overview

DIODE GEN PURP 400V 3A 2SMD

SJPL-L4VL Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)400V
Current - average rectification (Io)3A
Voltage at different If - Forward (Vf1.3V @ 3A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)50ns
Current at different Vr - Reverse leakage current50µA @ 400V
Capacitance at different Vr, F-
Installation typesurface mount
Package/casing2-SMD, J-lead
Supplier device packagingSJP
Operating Temperature - Junction-40°C ~ 150°C

SJPL-L4VL Related Products

SJPL-L4VL SJPL-L4
Description DIODE GEN PURP 400V 3A 2SMD 3 A, 400 V, SILICON, RECTIFIER DIODE

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号