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IPD60R280P7SAUMA1

Description
MOSFET N-CH 600V 12A TO252-3
Categorysemiconductor    Discrete semiconductor   
File Size921KB,14 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IPD60R280P7SAUMA1 Overview

MOSFET N-CH 600V 12A TO252-3

IPD60R280P7SAUMA1 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)600V
Current - Continuous Drain (Id) at 25°C12A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs280 milliohms @ 3.8A, 10V
Vgs (th) (maximum value) when different Id4V @ 190µA
Gate charge (Qg) at different Vgs (maximum value)18nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)761pF @ 400V
FET function-
Power dissipation (maximum)53W(Tc)
Operating temperature-40°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingPG-TO252-3
Package/casingTO-252-3, DPak (2 leads + tab), SC-63
IPD60R280P7S
MOSFET
600VCoolMOSªP7PowerTransistor
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor
highvoltagepowerMOSFETs,designedaccordingtothesuperjunction
(SJ)principleandpioneeredbyInfineonTechnologies.The600V
CoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.It
combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease
ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody
diodeagainsthardcommutationandexcellentESDcapability.
Furthermore,extremelylowswitchingandconductionlossesmake
switchingapplicationsevenmoreefficient,morecompactandmuch
cooler.
DPAK
tab
1
2
3
Features
•Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding
 commutationruggedness
•Significantreductionofswitchingandconductionlosses
•ExcellentESDrobustness>2kV(HBM)forallproducts
•BetterR
DS(on)
/packageproductscomparedtocompetitionenabledbya
 lowR
DS(on)
*A(below1Ohm*mm²)
•Productvalidationacc.JEDECStandard
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
Benefits
•Easeofuseandfastdesign-inthroughlowringingtendencyandusage
 acrossPFCandPWMstages
•Simplifiedthermalmanagementduetolowswitchingandconduction
 losses
•Increasedpowerdensitysolutionsenabledbyusingproductswith
 smallerfootprintandhighermanufacturingqualitydueto>2kVESD
 protection
•Suitableforawidevarietyofapplicationsandpowerranges
Potentialapplications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom
andUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g,typ
I
D,pulse
E
oss
@ 400V
Body diode di
F
/dt
Type/OrderingCode
IPD60R280P7S
Value
650
280
18
36
2.1
900
Package
PG-TO 252-3
Unit
V
mΩ
nC
A
µJ
A/µs
Marking
60S280P7
RelatedLinks
see Appendix A
Final Data Sheet
1
Rev.2.1,2018-04-25
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