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RN2306,LF

Description
TRANS PREBIAS PNP 0.1W USM
Categorysemiconductor    Discrete semiconductor   
File Size455KB,7 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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RN2306,LF Overview

TRANS PREBIAS PNP 0.1W USM

RN2306,LF Parametric

Parameter NameAttribute value
Transistor typePNP - Pre-biased
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)50V
Resistor - Substrate (R1)4.7 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value)80 @ 10mA,5V
Vce saturation value (maximum value) when different Ib,Ic300mV @ 250µA,5mA
Current - collector cutoff (maximum)500nA
Frequency - Transition200MHz
Power - Max100mW
Installation typesurface mount
Package/casingSC-70,SOT-323
Supplier device packagingUSM
RN2301~RN2306
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2301, RN2302, RN2303
RN2304, RN2305, RN2306
Unit: mm
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1301 to RN1306
Equivalent Circuit
Bias Resistor Values
Type No.
RN2301
RN2302
RN2303
RN2304
RN2305
RN2306
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
USM
JEDEC
JEITA
TOSHIBA
Weight: 0.006g
SC-70
2-2E1A
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2301 to RN2306
RN2301 to RN2306
RN2301 to RN2304
RN2305, RN2306
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
−50
−50
−10
−5
−100
100
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1987-09
1
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