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GP1605 C0G

Description
DIODE ARRAY GP 16A TO220AB
Categorysemiconductor    Discrete semiconductor   
File Size201KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

GP1605 C0G Overview

DIODE ARRAY GP 16A TO220AB

GP1605 C0G Parametric

Parameter NameAttribute value
Diode configuration1 pair of common cathodes
Diode typestandard
Current - average rectification (Io) (per diode)16A
Voltage at different If - Forward (Vf1.1V @ 8A
speedStandard recovery >500ns, >200mA (Io)
Current at different Vr - Reverse leakage current10µA @ 1000V
Operating Temperature - Junction-55°C ~ 150°C
Installation typeThrough hole
Package/casingTO-220-3
Supplier device packagingTO-220AB
GP1601 - GP1607
Taiwan Semiconductor
CREAT BY ART
16A, 50V - 1000V Glass Passivated Rectifiers
FEATURES
- High efficiency, low VF
- High current capability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
TO-220AB
MECHANICAL DATA
Case:
TO-220AB
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max.
Weight:
1.82 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage
@8A
Maximum reverse current @ rated V
R
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and applied reverse voltage of 4.0 V DC.
(Note 1)
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
R
θJC
T
J
T
STG
GP
1601
50
35
50
GP
1602
100
70
100
GP
1603
200
140
200
GP
1604
400
280
400
16
150
1.1
10
250
50
1.5
- 55 to +150
- 55 to +150
GP
1605
600
420
600
GP
1606
800
560
800
GP
1607
1000
700
1000
UNIT
V
V
V
A
A
V
μA
pF
°C/W
°C
°C
Version: F1511

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