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M29W400DT70N6F TR

Description
IC FLASH 4M PARALLEL 48TSOP
Categorystorage   
File Size944KB,48 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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M29W400DT70N6F TR Overview

IC FLASH 4M PARALLEL 48TSOP

M29W400DT70N6F TR Parametric

Parameter NameAttribute value
memory typenon-volatile
memory formatflash memory
technologyFLASH - NOR
storage4Mb (512K x 8,256K x 16)
Write cycle time - words, pages70ns
interview time70ns
memory interfacein parallel
Voltage - Power2.7 V ~ 3.6 V
Operating temperature-40°C ~ 85°C(TA)
Installation typesurface mount
Package/casing48-TFSOP (0.724", 18.40mm wide)
Supplier device packaging48-TSOP
M29W400DT
M29W400DB
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block)
3 V supply Flash memory
Features
Supply voltage
– V
CC
= 2.7 V to 3.6 V for Program, Erase
and Read
Access time: 45, 55, 70 ns
Programming time
– 10
μs
per byte/word typical
11 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 8 main blocks
Program/Erase controller
– Embedded byte/word program algorithms
Erase Suspend and Resume modes
– Read and Program another block during
Erase Suspend
Unlock bypass program command
– Faster production/batch programming
Temporary block unprotection mode
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Electronic signature
– Manufacturer code: 0020h
– Top device code M29W400DT: 00EEh
– Bottom device code M29W400DB: 00EFh
– RoHS packages
Automotive Device Grade 3
– Temperature: –40 to 125 °C
– Automotive grade certified
FBGA
SO44 (M)
(1)
TSOP48 (N)
12 x 20 mm
FBGA
TFBGA48 (ZA)
(1)
6 x 9 mm
TFBGA48 (ZE)
6 x 8 mm
1. These packages are no more in mass production.
April 2009
Rev 8
1/48
www.numonyx.com
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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