AB-54003L-450 datasheet, PDF - EEWORLD Datasheet

AB-54003L-450: DescriptionUHF BAND, Si, N-CHANNEL, RF POWER, MOSFET; Categorysemiconductor Discrete semiconductor; File Size239KB，5 Pages; ManufacturerETC

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AB-54003L-450 Overview

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

Parameter Name	Attribute value
Number of terminals	4
Minimum breakdown voltage	65 V
Processing package description	PLASTIC, M252, 2 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
surface mount	Yes
Terminal form	FLAT
terminal coating	NOT SPECIFIED
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Shell connection	SOURCE
Number of components	1
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Channel type	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	RF POWER
Maximum leakage current	14 A
highest frequency band	ULTRA HIGH FREQUENCY BAND

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