PMPB48EP,115 datasheet, PDF - EEWORLD Datasheet

PMPB48EP,115: DescriptionMOSFET P-CH 30V 4.7A 6DFN; Categorysemiconductor Discrete semiconductor; File Size734KB，14 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com; Environmental Compliance

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PMPB48EP,115 Overview

MOSFET P-CH 30V 4.7A 6DFN

Parameter Name	Attribute value
FET type	P channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	30V
Current - Continuous Drain (Id) at 25°C	4.7A（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	4.5V，10V
Rds On (maximum value) when different Id, Vgs	50 milliohms @ 4.7A, 10V
Vgs (th) (maximum value) when different Id	2.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	26nC @ 10V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	860pF @ 15V
FET function	-
Power dissipation (maximum)	1.7W（Ta），12.5W（Tc）
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	surface mount
Supplier device packaging	DFN2020MD-6
Package/casing	6-UDFN Exposed Pad

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