4 PIN DIP HIGH VOLTAGE PHOTOTRANSISTOR
PHOTOCOUPLER
EL851 Series
Schematic
Features:
•
High collector- emitter voltage (V
CEO
= 350V)
•
Current transfer ratio
(CTR: 50~600% at I
F
= 5mA, V
CE
= 5V)
•
High isolation voltage between input
and output (Viso = 5000 Vrms)
•
Compact dual-in-line package
•
Pb free and RoHS compliant.
•
Compliance with EU REACH
•
UL approved (No. E214129)
•
VDE approved (No. 132249)
•
SEMKO approved
•
NEMKO approved
•
DEMKO approved
•
FIMKO approved
•
CQC approved
Pin Configuration
1. Anode
2. Cathode
3. Emitter
4. Collector
Description
The EL851 series devices consist an infrared emitting diodes, optically
coupled to a phototransistor detector.
The devices are in a 4-pin DIP package and available in wide-lead spacing and SMD option.
Applications
•
Telephone line interface
•
Interface to power supply circuit
•
Controller for SSRs. DC motor
•
Programmable Controllers
1
Copyright © 2010, Everlight All Rights Reserved. Release Date : April 12, 2016. Issue No: DPC-0000082 Rev. 6
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DATASHEET
4 PIN DIP HIGH VOLTAGE PHOTOTRANSISTOR
PHOTOCOUPLER
EL851 Series
Absolute Maximum Ratings (Ta=25℃)
Parameter
Forward current
Peak forward current (1µs pulse)
Input
Reverse voltage
Power dissipation
Collector power dissipation
Collector-Emitter voltage
Output
Collector Current
Emitter-Collector voltage
Total Power Dissipation
Isolation Voltage*
1
Symbol
I
F
I
FM
V
R
P
D
P
C
V
CEO
I
C
V
ECO
P
TOT
V
ISO
T
OPR
T
STG
Rating
60
1
6
100
150
350
50
7
200
5000
-55 to 100
-55 to 125
260
Unit
mA
A
V
mW
mW
V
mA
V
mW
V rms
°C
°C
°C
Operating Temperature
Storage Temperature
Soldering Temperature*
2
T
SOL
Notes:
*1
AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together.
*
2 For 10 seconds
2
Copyright © 2010, Everlight All Rights Reserved. Release Date : April 12, 2016. Issue No: DPC-0000082 Rev. 6
www.everlight.com
DATASHEET
4 PIN DIP HIGH VOLTAGE PHOTOTRANSISTOR
PHOTOCOUPLER
EL851 Series
Electro-Optical Characteristics (Ta=25℃ unless specified otherwise)
Input
Parameter
Forward Voltage
Reverse Current
Input capacitance
Symbol
V
F
I
R
C
in
Min.
-
-
-
Typ.
1.2
-
30
Max.
1.4
10
250
Unit
V
µA
pF
Condition
I
F
= 10mA
V
R
= 5V
V = 0, f = 1kHz
Output
Parameter
Collector-Emitter dark current
Collector-Emitter breakdown
voltage
Emitter-Collector breakdown
voltage
Collector-Emitter capacitance
Symbol
I
CEO
BV
CEO
BV
ECO
C
CE
Min
-
350
7
-
Typ.
-
-
-
10
Max.
100
-
-
-
Unit
nA
V
V
pF
Condition
V
CE
= 200V
I
C
= 0.1mA
I
E
= 0.1mA
VCE = 0V, f = 1MHz
Transfer Characteristics
Parameter
Current Transfer Ratio
Collector-emitter
saturation voltage
Isolation resistance
Input-output capacitance
Rise time
Fall time
* Typical values at T
a
= 25°C
Symbol
CTR
V
CE(sat)
R
IO
C
IO
t
r
t
f
Min
50
-
10
-
-
-
11
Typ.
-
-
-
0.6
4
5
Max.
600
0.4
-
-
18
18
Unit
%
V
pF
µs
µs
Condition
I
F
= 5mA ,V
CE
= 5V
I
F
= 20mA , I
C
= 1mA
V
IO
= 500Vdc
V
IO
= 0, f = 1MHz
V
CE
= 2V, I
C
= 2mA,
R
L
= 100
3
Copyright © 2010, Everlight All Rights Reserved. Release Date : April 12, 2016. Issue No: DPC-0000082 Rev. 6
www.everlight.com
DATASHEET
4 PIN DIP HIGH VOLTAGE PHOTOTRANSISTOR
PHOTOCOUPLER
EL851 Series
Typical Electro-Optical Characteristics Curves
4
Copyright © 2010, Everlight All Rights Reserved. Release Date : April 12, 2016. Issue No: DPC-0000082 Rev. 6
www.everlight.com
DATASHEET
4 PIN DIP HIGH VOLTAGE PHOTOTRANSISTOR
PHOTOCOUPLER
EL851 Series
V
CC
I
F
Input
Pulse
I
C
R
L
Output
Input
R
IN
Output
Pulse
t
r
t
on
Figure 9. Switching Time Test Circuit & Waveforms
10%
90%
t
f
t
off
5
Copyright © 2010, Everlight All Rights Reserved. Release Date : April 12, 2016. Issue No: DPC-0000082 Rev. 6
www.everlight.com
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