MLX92215
3-Wire Hall Effect Latch
Features and Benefits
Wide operating voltage range : from 2.7V to
24V
Chopper-stabilized amplifier stage
Built-in negative temperature coefficient
Reverse Supply Voltage Protection
High ESD rating / Excellent EMC performance
Applications
Consumer and Industrial
Solid-state switch
E-Bike
Motorcycles
3-phase BLDC motor commutation
Ordering information
Part No.
MLX92215LUA-AAA-000-BU
MLX92215LSE-AAA-000-RE
MLX92215LSE-ACA-000-RE
Temperature Code
L (-40°C to 150°C)
L (-40°C to 150°C)
L (-40°C to 150°C)
Package Code
UA (TO92-3L)
SE (TSOT-23)
SE (TSOT-23)
Comment
B
OP
/B
RP
= ± 3mT, TC = -1100 ppm/°C
B
OP
/B
RP
= ± 3mT, TC = -1100 ppm/°C
Inverted output B
OP
/B
RP
= ± 3mT, TC =
-2000 ppm/°C
1. Functional Diagram
VDD
Voltage Regulator
with Reverse Polarity
Protection
Temperature
Compensation
Bop/Brp
reference
2. General Description
The Melexis MLX92215 is the second generation Hall-effect
latch designed in mixed signal CMOS technology.
The device integrates a voltage regulator, Hall sensor with
advanced offset cancellation system and an open-drain
output driver, all in a single package. Based on the existing
platform, the magnetic core is using an improved offset
cancellation system allowing faster and more accurate
processing while being temperature insensitive and stress
independent. In addition is implemented a negative
temperature coefficient to compensate the natural behaviour
of magnets becoming weaker with rise in temperature.
The included voltage regulator operates from 2.7V to 24V,
hence covering a wide range of applications. With the built-in
reverse voltage protection, a serial resistor or diode on the
supply line is not required so that even remote sensors can
be specified for low voltage operation down to 2.7V while
being reverse voltage tolerant.
With latching magnetic characteristics, the output is turned
low or high respectively with a sufficiently strong South or
North pole facing the package top side. When removing the
magnetic field, the device keeps its previous state.
Switched
Hall
Plate
CDS
Amplifier
Open-Drain
Output
OUT
Control
GND
REVISION 003 – JAN 17, 2018APRIL 20,
2018
3901092215
Page 1 of 13
MLX92215-AAA
3-Wire Hall Effect Latch
Contents
1. Functional Diagram ................................................................................................................................1
2. General Description................................................................................................................................1
3. Glossary of Terms ...................................................................................................................................3
4. Absolute Maximum Ratings ....................................................................................................................3
5. General Electrical Specifications .............................................................................................................4
6. Magnetic Specifications ..........................................................................................................................5
6.1. MLX92215LSE-AAA-000 ...................................................................................................................... 5
6.2. MLX92215LUA-AAA-000..................................................................................................................... 5
6.3. MLX92215LSE-ACA-000 ...................................................................................................................... 5
7. Output Behaviour versus Magnetic Pole ................................................................................................6
7.1. South Pole Active ................................................................................................................................ 6
8. Performance Graphs ..............................................................................................................................7
8.1. Magnetic parameters vs. TA .............................................................................................................. 7
8.2. Magnetic parameters vs. VDD ........................................................................................................... 7
8.3. VDSon vs. TA ....................................................................................................................................... 7
8.4. VDSon vs. VDD .................................................................................................................................... 7
8.5. IDD vs. TA ............................................................................................................................................ 7
8.6. IDD vs. VDD ......................................................................................................................................... 7
8.7. IOFF vs. TA ........................................................................................................................................... 8
8.8. IOFF vs. VOUT ...................................................................................................................................... 8
8.9. SE Power Derating vs. TA .................................................................................................................... 8
8.10. UA Power Derating vs. TA ................................................................................................................ 8
9. Application Information..........................................................................................................................9
9.1. Typical Three-Wire Application Circuit .............................................................................................. 9
10. Standard information regarding manufacturability of Melexis products with different soldering
processes.............................................................................................................................................10
11. ESD Precautions .................................................................................................................................10
12. Packages.............................................................................................................................................11
12.1. SE Package (TSOT-23) ..................................................................................................................... 11
12.2. UA (TO92 - 3L) ................................................................................................................................ 12
13. Contact ...............................................................................................................................................13
14. Disclaimer...........................................................................................................................................13
REVISION 003 – JAN 17, 2018APRIL 20,
2018
3901092215
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MLX92215-AAA
3-Wire Hall Effect Latch
3. Glossary of Terms
MilliTesla (mT), Gauss
RoHS
TSOT
ESD
Units of magnetic flux density: 1mT = 10 Gauss
Restriction of Hazardous Substances
Thin Small Outline Transistor (TSOT package) – also referred with the Melexis package
code “SE”
Electro-Static Discharge
4. Absolute Maximum Ratings
Parameter
Supply Voltage
(1, 2)
(1, 3)
Symbol
V
DD
V
DD
I
DD
I
DD
(1, 2)
(1, 3)
Value
+27
+32
+20
+50
-24
-30
-20
-50
+27
+20
+75
-0.5
-50
-40 to +150
-55 to +165
+165
4000
500
1000
Unlimited
Units
V
V
mA
mA
V
V
mA
mA
V
mA
mA
V
mA
C
C
C
V
V
V
mT
Supply Voltage (Load dump)
Supply Current
Supply Current
(1, 2, 4)
(1, 3, 4 )
Reverse Supply Voltage
V
DDREV
V
DDREV
I
DDREV
I
DDREV
V
OUT
I
OUT
I
OUT
Reverse Supply Voltage (Load dump)
Reverse Supply Current
Reverse Supply Current
Output Voltage
Output Current
Output Current
(1, 2)
(1, 2, 5)
(1, 3, 6)
(1)
(1, 2)
(1, 2, 5)
(1, 3, 5)
Reverse Output Voltage
Reverse Output Current
V
OUTREV
I
OUTREV
T
A
T
S
(7)
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
ESD Sensitivity – HBM
ESD Sensitivity – MM
(8)
(9)
(10)
T
J
-
-
-
B
ESD Sensitivity – CDM
Magnetic Flux Density
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum-rated
conditions for extended periods may affect device reliability.
1
2
The maximum junction temperature should not be exceeded
For maximum 1 hour
3
For maximum 0.5 s
4
Including current through protection device
5
Through protection device
6
For V
OUT
≤ 27V
7
For 1000 hours
8
Human Model according AEC-Q100-002 standard
9
Machine Model according AEC-Q100-003 standard
10
Charged Device Model according AEC-Q100-011 standard
REVISION 003 – JAN 17, 2018APRIL 20,
2018
3901092215
Page 3 of 13
MLX92215-AAA
3-Wire Hall Effect Latch
5. General Electrical Specifications
DC Operating Parameters T
A
= -40°C to 150°C, V
DD
= 2.7V to 24V (unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
(1)
Max
Units
Supply Voltage
Supply Current
Reverse Supply Current
Output Leakage Current
Output Saturation Voltage
Output Rise Time
(R
PU
dependent)
(2)
Output Fall Time
(On-chip controlled)
Chopping Frequency
Output Refresh Period
Delay time
(2,4)
(2)
(2)
V
DD
I
DD
I
DDREV
I
OFF
V
DSon
t
R
t
F
f
CHOP
t
PER
t
D
(2, 5)
Operating
2.7
1.5
-
3.0
24
4.5
1
V
mA
mA
µA
V
µs
µs
kHz
µs
µs
V
DD
= -18V
V
OUT
= 12V, V
DD
= 12V, B < Brp
B > B
OP
, V
DD
= 3.8 to 18V, I
OUT
= 20mA
V
DD
= 12V, V
PU
= 5V, R
PU
= 1kΩ
C
LOAD
= 50pF to GND
V
DD
= 12V, V
PU
= 5V, R
PU
= 1kΩ
C
LOAD
= 50pF to GND
(3)
0.1
0.2
0.1
0.1
0.3
0.3
340
6
10
0.5
1
1
Output Jitter (p-p)
(2,6)
t
JITTER
f
SW
t
ON
R
TH
R
TH
Average over 1000 successive switching
events @10kHz, square wave with B≥30mT,
t
RISE
=t
FALL
≤20μs
Over 1000 successive switching events
@1kHz, square wave with B≥30mT,
t
RISE
=t
FALL
≤100μs
B≥30mT and square wave magnetic field
V
DD
= 5V, dV
DD
/dt > 2V/us
Single layer (1S) Jedec board
Single layer (1S) Jedec board
Table 1: Electrical specifications
30
6
±3
50
16
300
200
35
µs
kHz
μs
°C/W
°C/W
Maximum Switching Frequency
Power-On Time
(7,8)
SE Package Thermal Resistance
UA Package Thermal Resistance
1
2
Typical values are defined at T
A
= +25°C and V
DD
= 12V
Guaranteed by design and verified by characterization, not production tested
3
R
PU
and V
PU
are respectively the external pull-up resistor and pull-up power supply
4
The Delay Time is the time from magnetic threshold reached to the start of the output switching
5
Output jitter is the unpredictable deviation of the Delay time
6
Maximum switching frequency corresponds to the maximum frequency of the applied magnetic field which is detected
without loss of pulses
7
The Power-On Time represents the time from reaching V
DD
= V
POR
to the first refresh of the output (first valid output state)
8
Power-On Slew Rate is not critical for the proper device start-up
REVISION 003 – JAN 17, 2018APRIL 20,
2018
3901092215
Page 4 of 13
MLX92215-AAA
3-Wire Hall Effect Latch
6. Magnetic Specifications
6.1. MLX92215LSE-AAA-000
DC Operating Parameters V
DD
= 3.8 to 24V, T
A
= -40°C to 150°C
Test Condition
Min
Operating Point
B
OP
(mT)
Typ
(1)1)
Max
Min
Release Point
B
RP
(mT)
Typ
(1)
Max
TC
(ppm/
o
C)
Typ
(1)
Active Pole
T
J
= -40°C
T
J
= 25°C
T
J
= 150°C
1
1
0.5
3.2
3
2.6
5
5
5
-5
-5
-5
-3.2
-3.0
-2.6
-1
-1
-0.5
-1100
South Pole
6.2. MLX92215LUA-AAA-000
DC Operating Parameters V
DD
= 3.8 to 24V, T
A
= -40°C to 150°C
Test Condition
Operating Point
B
OP
(mT)
Release Point
B
RP
(mT)
TC
(ppm/
o
C)
Active Pole
Min
Typ
(1)
Max
Min
Typ
(1)
Max
Typ
(1)
T
J
= -40°C
T
J
= 25°C
T
J
= 150°C
1
1
0.5
3.2
3
2.6
5
5
5
-5
-5
-5
-3.2
-3.0
-2.6
-1
-1
-0.5
-1100
South Pole
6.3. MLX92215LSE-ACA-000
DC Operating Parameters V
DD
= 3.8 to 24V, T
A
= -40°C to 150°C
Test Condition
Operating Point
B
OP
(mT)
Release Point
B
RP
(mT)
TC
(ppm/
o
C)
Active Pole
Min
Typ
(1)
Max
Min
Typ
(1)
Max
Typ
(1)
T
J
= -40°C
T
J
= 25°C
T
J
= 150°C
Note:
=
2
−
1
×(
2
−
1
)
1.2
1.0
0.5
× 10
6
, [
℃
3.2
2.8
2.1
5.5
4.7
4.2
-5.5
-4.7
-4.2
-3.2
-2.8
-2.1
-1.2
-1.0
-0.5
-2000
North Pole
25℃
] ;
1
= −40℃;
2
= 150℃
1
Typical values are defined at T
A
= +25°C and V
DD
= 12V
REVISION 003 – JAN 17, 2018APRIL 20,
2018
3901092215
Page 5 of 13
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