MOSFET N-CH 60V 90A DPAK
| Parameter Name | Attribute value |
| FET type | N channel |
| technology | MOSFET (metal oxide) |
| Drain-source voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) at 25°C | 90A（Ta） |
| Drive voltage (maximum Rds On, minimum Rds On) | 4.5V，10V |
| Rds On (maximum value) when different Id, Vgs | 3.3 milliohms @ 45A, 10V |
| Vgs (th) (maximum value) when different Id | 2.5V @ 500µA |
| Gate charge (Qg) at different Vgs (maximum value) | 81nC @ 10V |
| Vgs (maximum value) | ±20V |
| Input capacitance (Ciss) at different Vds (maximum value) | 5400pF @ 10V |
| FET function | - |
| Power dissipation (maximum) | 157W（Tc） |
| Operating temperature | 175°C（TJ） |
| Installation type | surface mount |
| Supplier device packaging | TO-252-3 |
| Package/casing | TO-252-3, DPak (2 leads + tab), SC-63 |
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