• Multiple center power and ground pins for improved
noise immunity
• Easy memory expansion with CE\ and OE\
options
• All inputs and outputs are TTL-compatible
• Single +5V Power Supply +/- 10%
• Data Retention Functionality Testing (Contact Factory)
• Cost Efficient Plastic Packaging
• Extended Testing Over -55ºC to +125ºC for plastics
• Plastic 36 pin PSOJ is fully compatible with the
Ceramic 36 pin SOJ
• 3.3V Future Offering
36-Pin Flat Pack (F)
OPTIONS
• Timing
12ns access
15ns access
17ns access
20ns access
25ns access
35ns access
45ns access
• Operating Temperature Ranges
Military (-55
o
C to +125
o
C)
Industrial (-40
o
C to +85
o
C)
• Package(s)
Ceramic LCC
Ceramic Flatpack
Plastic SOJ
Ceramic SOJ
• 2V data retention/low power
• Radiation Tolerant (EPI)
MARKING
-12
-15
-17
-20
-25
-35
-45
XT
IT
GENERAL DESCRIPTION
The AS5C512K8 is a high speed SRAM. It offers flexibility in
high-speed memory applications, with chip enable (CE\) and output
enable (OE\) capabilities. These features can place the outputs in
High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write enable (WE\)
and CE\ inputs are both LOW. Reading is accomplished when WE\
remains HIGH and CE\ and OE\ go LOW.
As a option, the device can be supplied offering a reduced power
standby mode, allowing system designers to meet low standby power
requirements. This device operates from a single +5V power supply
and all inputs and outputs are fully TTL-compatible.
The AS5C512K8DJ offers the convenience and reliability of the
AS5C512K8 SRAM and has the cost advantage of a durable plastic.
The AS5C512K8DJ is footprint compatible with 36 pin CSOJ
package of the SMD 5692-95600.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
EC
F
DJ
ECJ
No. 210
No. 307
No. 903
No.503
L (Consult Factory)
E
For more products and information
please visit our web site at
www.austinsemiconductor.com
AS5C512K8
Rev. 6.2 06/05
1
SRAM
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
VCC
GND
AS5C512K8
DQ8
INPUT BUFFER
ROW DECODER
I/O
CONTROLS
4,194,304-BIT
MEMORY ARRAY
1024 ROWS X
4096 COLUMNS
A0-A18
DQ1
CE\
COLUMN DECODER
OE\
WE\
*POWER
DOWN
*On the low voltage Data Retention option.
PIN FUNCTIONS
A0 - A18
Address Inputs
Write Enable
Chip Enable
Output Enable
Data Inputs/Outputs
Power
Ground
No Connection
TRUTH TABLE
MODE
OE\ CE\ WE\
STANDBY
X
H
X
READ
L
L
H
NOT SELECTED H
L
H
WRITE
X
L
L
X = Don’t Care
WE\
I/O
HIGH-Z
Q
HIGH-Z
D
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
CE\
OE\
I/O
0
- I/O
7
V
CC
V
SS
NC
AS5C512K8
Rev. 6.2 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
SRAM
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
AS5C512K8
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
Voltage on Vcc Supply Relative to Vss
Vcc ..............................................................................-.5V to +7.0V a stress rating only and functional operation of the device at
Storage Temperature (Plastic)......................-65°C to +150°C these or any other conditions above those indicated in the
Storage Temperature (Ceramic)...................-55°C to +125°C operation section of this specification is not implied. Exposure
Short Circuit Output Current (per I/O)…........................20mA to absolute maximum rating conditions for extended periods
Voltage on any Pin Relative to Vss.................-.5V to Vcc+1V may affect reliability.
Maximum Junction Temperature**..............................+150°C ** Junction temperature depends upon package type, cycle
Power Dissipation ................................................................1W time, loading, ambient temperature and airflow, and humidity.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55
o
C < T
A
< +125
o
C & -40
o
C < T
A
< +85
o
C ; Vcc = 5V +10%)
'(6&5,37,21
3RZHU 6XSSO\
&XUUHQW 2SHUDWLQJ
I
&21',7,216
:(? &(? 9
,/
9FF
0$; W
5&
2XWSXWV 2SHQ
/ 9HUVLRQ 2QO\
&(? ! 9
,+
$OO RWKHU LQSXWV 9
,/
9FF 0$; I
2XWSXWV 2SHQ
3RZHU 6XSSO\
&XUUHQW 6WDQGE\
/ 9HUVLRQ 2QO\
&(? ! 9FF 9 9FF 0$;
9
,1
9VV 9 RU
9
,1
!9FF 9 I
/ 9HUVLRQ 2QO\
0$;
,
&&63
,
&&/3
,
6%763
,
6%7/3
P$
P$
P$
P$
P$
P$
6<0
0$;
81,76 127(6
,
6%&63
,
6%&/3
)
#
#
#
+,
# $ %$&'
!
!
( ) *"
( *"
!
!
)
)
µ
"
µ
"
CAPACITANCE
PARAMETER
Input Capacitance
Output Capactiance
CONDITIONS
T
A
= 25 C, f = 1MHz
V
IN
= 0
o
SYMBOL
C
I
Co
MAX
12
14
UNITS
pF
pF
NOTES
4
4
AS5C512K8
Rev. 6.2 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
SRAM
Austin Semiconductor, Inc.
AS5C512K8
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
京公网安备 11010802033920号
EEWORLD
