MA40190-276M datasheet, PDF - EEWORLD Datasheet

MA40190-276M: DescriptionSILICON, LOW BARRIER SCHOTTKY,XBAND, MIXER DIODE; Categorydiode; File Size96KB，4 Pages; ManufacturerTE Connectivity; Websitehttp://www.te.com

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MA40190-276M Overview

SILICON, LOW BARRIER SCHOTTKY,XBAND, MIXER DIODE

Parameter Name	Attribute value
Maker	TE Connectivity
package instruction	O-LALF-G2
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Other features	MATCHED PAIR, LOW NOISE
Shell connection	ISOLATED
Configuration	SEPARATE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	MIXER DIODE
frequency band	X BAND
JESD-30 code	O-LALF-G2
maximum noise index	12 dB
Number of components	2
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Pulse input maximum power	0.1 W
Minimum pulse input power	0.5 W
Certification status	Not Qualified
surface mount	YES
technology	SCHOTTKY
Terminal form	GULL WING
Terminal location	AXIAL
Schottky barrier type	LOW BARRIER
Base Number Matches	1

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