DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | NXP |
| package instruction | O-LELF-R2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Minimum breakdown voltage | 228 V |
| Shell connection | ISOLATED |
| Maximum clamping voltage | 336 V |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 code | O-LELF-R2 |
| Maximum non-repetitive peak reverse power dissipation | 300 W |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Minimum operating temperature | -65 °C |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| polarity | UNIDIRECTIONAL |
| Maximum power dissipation | 0.8 W |
| Certification status | Not Qualified |
| Maximum reverse current | 5 µA |
| surface mount | YES |
| technology | AVALANCHE |
| Terminal form | WRAP AROUND |
| Terminal location | END |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Base Number Matches | 1 |
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