64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 8 Mbit
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | SPANSION |
Parts packaging code | BGA |
package instruction | 8 X 11.60 MM, FBGA-73 |
Contacts | 73 |
Reach Compliance Code | _compli |
Maximum access time | 75 ns |
Other features | PSEUDO SRAM IS ORGANISED AS 512K X 16; CONTAINS ADDITIONAL 2M X 16 FLASH |
JESD-30 code | R-PBGA-B73 |
JESD-609 code | e0 |
length | 11.6 mm |
memory density | 67108864 bi |
Memory IC Type | MEMORY CIRCUIT |
memory width | 16 |
Mixed memory types | FLASH+PSRAM |
Humidity sensitivity level | 3 |
Number of functions | 1 |
Number of terminals | 73 |
word count | 4194304 words |
character code | 4000000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 4MX16 |
Package body material | PLASTIC/EPOXY |
encapsulated code | LFBGA |
Encapsulate equivalent code | BGA73,10X12,32 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, LOW PROFILE, FINE PITCH |
Peak Reflow Temperature (Celsius) | 240 |
power supply | 3 V |
Certification status | Not Qualified |
Maximum seat height | 1.4 mm |
Maximum standby current | 0.00006 A |
Maximum slew rate | 0.03 mA |
Maximum supply voltage (Vsup) | 3.3 V |
Minimum supply voltage (Vsup) | 2.7 V |
Nominal supply voltage (Vsup) | 3 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | 30 |
width | 8 mm |
Base Number Matches | 1 |