Philips Semiconductors
Product data
CMOS system reset
SA56614-XX
GENERAL DESCRIPTION
The SA56614-XX is a CMOS device designed to generate a reset
signal for a variety of microprocessor and logic systems. Accurate
reset signals are generated during momentary power interruptions,
or whenever power supply voltages sag to intolerable levels.
Several reset threshold versions of the device are available. A
totem-pole output topology is incorporated to provide both current
source and sink capability to the user.
SA56614-XX is available in the SOT23-5 surface mount package.
FEATURES
•
10 V
DC
maximum operating voltage
•
Low operating voltage (0.95 V)
•
Totem pole CMOS output
•
Offered in reset thresholds of
•
Available in SOT23-5 surface mount package
SIMPLIFIED SYSTEM DIAGRAM
V
DD
2 V
DD
APPLICATIONS
1.85, 2.0, 2.7, 2.8, 2.9, 3.0, 3.1, 4.2, 4.3, 4.4, 4.5, 4.6, 4.7 V
DC
•
Microcomputer systems
•
Logic systems
•
Battery monitoring systems
•
Back-up power supply circuits
•
Voltage detection circuits
V
DD
NE56614-XX
R
V
OUT
RESET
CPU
V
REF
R
R
1
V
SS
3 V
SS
V
SS
SL01343
Figure 1. Simplified system diagram.
2002 Sep 13
2
853–2248 28914
Philips Semiconductors
Product data
CMOS system reset
SA56614-XX
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
SA56614-XXGW
NAME
SOT23-5, SOT25, SO5
DESCRIPTION
plastic small outline package; 5 leads (see dimensional drawing)
TEMPERATURE
RANGE
–40 to +85
°C
NOTE:
The device has twelve detection voltage options, indicated by the
XX on the ‘Type number’.
XX
185
20
27
28
29
30
31
42
43
44
45
46
47
DETECT VOLTAGE (Typical)
1.85 V
2.0 V
2.7 V
2.8 V
2.9 V
3.0 V
3.1 V
4.2 V
4.3 V
4.4 V
4.5 V
4.6 V
4.7 V
PIN CONFIGURATION
PIN DESCRIPTION
PIN
SYMBOL
V
OUT
V
DD
V
SS
N/C
N/C
DESCRIPTION
Reset HIGH output.
Positive supply.
Ground. Negative supply.
No connection.
No connection.
1
2
V
OUT
1
5
N/C
V
DD
2
SA56614-XX
3
4
V
SS
3
4
N/C
5
SL01360
Figure 2. Pin configuration.
MAXIMUM RATINGS
SYMBOL
V
DD
V
OUT
I
OUT
T
oper
T
stg
P
Power supply voltage
Output voltage
Output current
Operating temperature
Storage temperature
Power dissipation
PARAMETER
MIN.
–
V
SS
– 0.3
–
–40
–40
–
MAX.
12
V
DD
+ 0.3
50
85
125
150
UNIT
V
V
mA
°C
°C
mW
2002 Sep 13
3
Philips Semiconductors
Product data
CMOS system reset
SA56614-XX
DC ELECTRICAL CHARACTERISTICS
Characteristics measured with T
amb
= 25
°C,
unless otherwise specified.
SYMBOL
V
S
∆V
S
V
S
/∆T
I
CC
I
OH
I
NDS1
I
NDS2
I
NDS3
I
PDS1
I
PDS2
I
PDS3
PARAMETER
Reset detection threshold
Hysteresis
Threshold voltage temperature
coefficient
Supply current
I
DS
leakage current when OFF
N-channel I
DS
output sink current 1
N-channel I
DS
output sink current 2
(for V
S
> 2.6 V)
N-channel I
DS
output sink current 3
(for V
S
> 3.9 V)
P-channel I
DS
output source current 1
(for V
S
< 4.0 V)
P-channel I
DS
output source current 2
(for 4.0 V < V
S
< 5.7 V)
P-channel I
DS
output source current 3
(for V
S
≥
5.7 V)
V
DD
= 0 V
→
V
S
+ 1.0 V
→
0 V
–40
°C ≤
T
amb
≤
+85
°C
V
DD
= V
S
+ 1.0 V
V
DD
= V
DS
= 10 V
V
DD
= 1.2 V; V
DS
= 0.5 V
V
DS
= 0.5 V; V
DD
= 2.4 V
V
DS
= 0.5 V; V
DD
= 3.6 V
V
DS
= 0.5 V; V
DD
= 4.8 V
V
DS
= 0.5 V; V
DD
= 6.0 V
V
DS
= 0.5 V; V
DD
= 8.4 V
3
Fig. 18
2
Fig. 17
3
Fig. 18
1
Fig. 16
CONDITIONS
TEST
CIRCUIT
MIN.
V
S
– 2%
V
S
×
0.03
–
–
–
–0.23
–1.6
–3.2
0.36
0.46
0.59
TYP.
V
S
V
S
×
0.05
±0.01
0.25
–
0.50
–3.7
–7.00
0.62
0.75
0.96
MAX.
V
S
+ 2%
V
S
×
0.08
–
1.0
0.1
–
–
–
–
–
–
UNIT
V
V
%/°C
µA
µA
mA
mA
mA
mA
mA
mA
2002 Sep 13
4
Philips Semiconductors
Product data
CMOS system reset
SA56614-XX
TYPICAL PERFORMANCE CURVES
0.50
0.45
I
DD
, SUPPLY CURRENT (mA)
0.40
0.35
0.30
0.25
0.20
0.15
0.10
–50
V
DD
= V
S
+ 1.0 V
NORMALIZED TO 25
°C
+0.20
+0.15
+0.10
+0.05
V
S
–0.05
–0.10
–0.15
–0.20
–50
V
CC
FALLING
V
S
NORMALIZED TO 25
°C
V
S
, NORMALIZED THRESHOLD (V)
–25
0
25
50
75
100
125
–25
0
25
50
75
100
125
T
amb
, TEMPERATURE (°C)
T
amb
, TEMPERATURE (°C)
SL01344
SL01345
Figure 3. Supply current versus temperature.
Figure 4. Detection threshold versus temperature.
200
V
S(HYS)
, DETECTION HYSTERESIS (mV)
V
S(HYS)
= V
SH
– V
SL
(V
CC
RISING – V
CC
FALLING)
150
3.0
V
DS
= 0.5 V
I
DS
, OUTPUT FET CURRENT (mA)
2.5
2.0
N-CHANNEL
1.5
100
1.0
P-CHANNEL
0.5
50
0
–50
–25
0
25
50
75
100
125
0
–50
–25
0
25
50
75
100
125
T
amb
, TEMPERATURE (°C)
T
amb
, TEMPERATURE (°C)
SL01346
SL01347
Figure 5. Detection hysteresis versus temperature.
Figure 6. Output FET current versus temperature.
5.0
T
AMB
= 25
°C
TYPICAL CHARACTERISTIC.
DETECTION AND RELEASE
VOLTAGE POINTS DEPEND ON
THE SPECIFIC DEVICE TYPE.
V
S(HYS)
2.0
DETECTION (V
SL
)
RELEASE (V
SH
)
0.6
T
AMB
= 25
°C
0.5
I
DD
, SUPPLY CURRENT (
µ
A)
V
OUT
, OUTPUT VOLTAGE (V)
4.0
0.4
3.0
0.3
0.2
1.0
0.1
0
0
1.0
2 .0
3.0
4.0
5.0
6.0
V
DD
, SUPPLY VOLTAGE (V)
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
V
DD
, SUPPLY VOLTAGE (V)
SL01348
SL01349
Figure 7. Output voltage versus supply voltage.
Figure 8. Supply current versus supply voltage.
2002 Sep 13
5
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