B10NK60Z datasheet, PDF - EEWORLD Datasheet

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B10NK60Z: Description10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB; Categorysemiconductor Discrete semiconductor; File Size913KB，24 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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B10NK60Z Overview

10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

B10NK60Z Parametric

Parameter Name	Attribute value
Number of terminals	3
Minimum breakdown voltage	600 V
Processing package description	ROHS COMPLIANT, TO-220FP, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	THROUGH-hole
terminal coating	MATTE Tin
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	Single WITH BUILT-IN diode
Shell connection	isolation
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	universal power supply
Maximum leakage current	10 A
Rated avalanche energy	300 mJ
Maximum drain on-resistance	0.7500 ohm
Maximum leakage current pulse	36 A

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STB10NK60Z, STP10NK60Z,

STP10NK60ZFP, STW10NK60Z

N-channel 600 V, 0.65

typ., 10 A SuperMESH™ Power MOSFET

in I

PAK, D

PAK, TO-220, TO-220FP, TO-247 packages

Datasheet

−

production data

Features

Type

STB10NK60Z-1

STB10NK60ZT4

STP10NK60Z

STP10NK60ZFP

STW10NK60Z

■

TAB

DSS

600 V

DS(on)

max

TAB

< 0.75

10 A 115 W

< 0.75

10 A 115 W

< 0.75

10 A 115 W

< 0.75

10 A

35 W

< 0.75

10 A 156 W

TAB

PAK

TO-220FP

TO-220

Extremely high dv/dt capability

100% avalanche tested

Gate charge minimized

Zener-protected

Figure 1.

PAK

TO-247

Applications

■

Internal schematic diagram

Switching applications

Description

These devices are N-channel Zener-protected

Power MOSFET developed using

STMicroelectronics' SuperMESH™ technology,

achieved through optimization of ST's well-

established strip-based PowerMESH™ layout. In

addition to a significant reduction in on-

resistance, this device is designed to ensure a

high level of dv/dt capability for the most

demanding applications.

Table 1.

Device summary

Marking

B10NK60Z

P10NK60Z

P10NK60ZFP

W10NK60Z

Package

I²PAK

D²PAK

TO-220

TO-220FP

TO-247

Packaging

Tube

Tape and reel

Tube

Order codes

STB10NK60Z-1

STB10NK60ZT4

STP10NK60Z

STP10NK60ZFP

STW10NK60Z

November 2012

This is information on a product in full production.

Doc ID 8526 Rev 11

1/24

www.st.com

B10NK60Z Related Products

	B10NK60Z	B10NK60Z-1	W10NK60Z	STP10NK60Z/FP	P10NK60ZFP	P10NK60Z
Description	10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Number of terminals	3	3	3	3	3	3
Minimum breakdown voltage	600 V	600 V	600 V	600 V	600 V	600 V
Processing package description	ROHS COMPLIANT, TO-220FP, 3 PIN	ROHS COMPLIANT, TO-220FP, 3 PIN	ROHS COMPLIANT, TO-220FP, 3 PIN	ROHS COMPLIANT, TO-220FP, 3 PIN	ROHS COMPLIANT, TO-220FP, 3 PIN	ROHS COMPLIANT, TO-220FP, 3 PIN
Lead-free	Yes	Yes	Yes	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes	Yes	Yes	Yes
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE
packaging shape	Rectangle	Rectangle	Rectangle	Rectangle	Rectangle	Rectangle
Package Size	Flange mounting	Flange mounting	Flange mounting	Flange mounting	Flange mounting	Flange mounting
Terminal form	THROUGH-hole	THROUGH-hole	THROUGH-hole	THROUGH-hole	THROUGH-hole	THROUGH-hole
terminal coating	MATTE Tin	MATTE Tin	MATTE Tin	MATTE Tin	MATTE Tin	MATTE Tin
Terminal location	single	single	single	single	single	single
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode
Shell connection	isolation	isolation	isolation	isolation	isolation	isolation
Number of components	1	1	1	1	1	1
transistor applications	switch	switch	switch	switch	switch	switch
Transistor component materials	silicon	silicon	silicon	silicon	silicon	silicon
Channel type	N channel	N channel	N channel	N channel	N channel	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT
Transistor type	universal power supply	universal power supply	universal power supply	universal power supply	universal power supply	universal power supply
Maximum leakage current	10 A	10 A	10 A	10 A	10 A	10 A
Rated avalanche energy	300 mJ	300 mJ	300 mJ	300 mJ	300 mJ	300 mJ
Maximum drain on-resistance	0.7500 ohm	0.7500 ohm	0.7500 ohm	0.7500 ohm	0.7500 ohm	0.7500 ohm
Maximum leakage current pulse	36 A	36 A	36 A	36 A	36 A	36 A

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