P6SMB6.8(A) - P6SMB220(A)
Taiwan Semiconductor
600W, 6.8V - 220V Surface Mount Transient Voltage Suppressor
FEATURES FEATURES
●
●
●
●
●
●
●
Low profile package
Ideal for automated placement
Glass passivated junction
Built-in strain relief
Excellent clamping capability
Typical I
R
less than 1μA above 10V
Fast response time: Typically less than
1.0ps from 0 volt to BV min
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
WM
V
BR
(uni-directional)
P
PPSM
T
J MAX
Package
Configuration
VALUE
5.5 - 185
6.8 - 220
600
150
Single die
UNIT
V
V
W
°C
DO-214AA (SMB)
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
TV
Monitor
MECHANICAL DATA
● Case: DO-214AA (SMB)
● Molding compound meets UL 94V-0 flammability rating
● Moisture sensitivity level: level 1, per J-STD-020
● Part no. with suffix "H" means AEC-Q101 qualified
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
Weight: 0.09 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Non-repetitive peak impulse power dissipation with
10/1000
μ
s waveform
(1)
Steady state power dissipation at T
A
=25°C
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
(2)
Forward Voltage @ I
F
=50A for Uni-directional only
Junction temperature
Storage temperature
Notes:
1.
2.
SYMBOL
P
PPSM
P
tot
I
FSM
V
F
T
J
T
STG
PART NUMBER
600
3
100
3.5/5.0
-55 to +150
-55 to +150
UNIT
W
W
A
V
°C
°C
Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25°C Per Fig. 2
V
F
=3.5V on P6SMB6.8 - P6SMB91 Devices and V
F
=5.0V on P6SMB100 - P6SMB220 Device.
Devices for Bipolar Applications
1.
For bidirectional use C or CA suffix for types P6SMB6.8 - types P6SMB220A
2.
Electrical characteristics apply in both directions
1
Version:N1701
P6SMB6.8(A) - P6SMB220(A)
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-case thermal resistance
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJC
R
ӨJA
LIMIT
10
55
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
Breakdown
Device
Device
Marking
Code
voltage
V
BR
(V)
(Note 1)
Test
Current
I
T
(mA)
Stand-Off
Voltage
@V
WM
(V)
Maximum
Reverse
Leakage
@V
WM
I
D
(µA)
Maximum
Peak Pulse
Current
I
PPM
(A)
(Note 2)
Maximum
clamping
voltage
V
C
@I
PP
(V)
Maximum
Temperature
Coefficient of
V
BR
(%/°C)
P6SMB6.8
P6SMB6.8A
P6SMB7.5
P6SMB7.5A
P6SMB8.2
P6SMB8.2A
P6SMB9.1
P6SMB9.1A
P6SMB10
P6SMB10A
P6SMB11
P6SMB11A
P6SMB12
P6SMB12A
P6SMB13
P6SMB13A
P6SMB15
P6SMB15A
P6SMB16
P6SMB16A
P6SMB18
P6SMB18A
P6SMB20
P6SMB20A
P6SMB22
P6SMB22A
P6SMB24
P6SMB24A
P6SMB27
P6SMB27A
P6SMB30
P6SMB30A
P6SMB33
P6SMB33A
P6SMB36
P6SMB36A
P6SMB39
P6SMB39A
P6SMB43
P6SMB43A
P6SMB47
P6SMB47A
P6SMB51
KDJ
KEJ
KFJ
KGJ
KHJ
KKJ
KLJ
KMJ
KNJ
KPJ
KQJ
KRJ
KSJ
KTJ
KUJ
KVJ
KWJ
KXJ
KYJ
KZJ
LDJ
LEJ
LFJ
LGJ
LHJ
LKJ
LLJ
LMJ
LNJ
LPJ
LQJ
LRJ
LSJ
LTJ
LUJ
LVJ
LWJ
LXJ
LYJ
LZJ
MDJ
MEJ
MFJ
Min.
6.12
6.46
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
45.9
Max.
7.48
7.14
8.25
7.88
9.02
8.61
10.00
9.55
11.00
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
51.7
49.4
56.1
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
41.3
1000
1000
500
500
200
200
50
50
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
58
60
53
55
50
52
45
47
42
43
38
40
36
37
33
34
28
29
26
28
23
25
21
22
19
20
18
19
16
16.8
14.0
15.0
13.0
13.8
12.0
12.6
11.1
11.6
10.0
10.6
9.2
9.7
8.5
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.5
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
73.5
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.078
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
0.102
Version:N1701
P6SMB6.8(A) - P6SMB220(A)
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
Device
Device
Marking
Code
Breakdown voltage
V
BR
(V)
(Note 1)
Test
Current
I
T
(mA)
Stand-Off
Voltage
@V
WM
(V)
Maximum
Reverse
Leakage
@V
WM
I
D
(µA)
Maximum
Peak Pulse
Current
I
PPM
(A)
(Note 2)
Maximum
voltage
V
C
@I
PP
(V)
Maximum
e
Coefficient
of
V
BR
(%/°C)
clamping Temperatur
P6SMB51A
P6SMB56
P6SMB56A
P6SMB62
P6SMB62A
P6SMB68
P6SMB68A
P6SMB75
P6SMB75A
P6SMB82
P6SMB82A
P6SMB91
P6SMB91A
P6SMB100
P6SMB100A
P6SMB110
P6SMB110A
P6SMB120
P6SMB120A
P6SMB130
P6SMB130A
P6SMB150
P6SMB150A
P6SMB160
P6SMB160A
P6SMB170
P6SMB170A
P6SMB180
P6SMB180A
P6SMB200
P6SMB200A
P6SMB220
P6SMB220A
Notes:
MGJ
MHJ
MKJ
MLJ
MMJ
MNJ
MPJ
MQJ
MRJ
MSJ
MTJ
MUJ
MVJ
MWJ
MXJ
MYJ
MZJ
NDJ
NEJ
NFJ
NGJ
NHJ
NKJ
NLJ
NMJ
NNJ
NPJ
NQJ
NRJ
NSJ
NTJ
NUJ
NVJ
Min.
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90
95
99
105
108
114
117
124
135
143
144
152
153
162
162
171
180
190
198
209
Max.
53.6
61.6
58.8
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
100
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
43.6
45.4
47.8
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102.0
105.0
111.0
121.0
128.0
130.0
136.0
138.0
145.0
146.0
154.0
162.0
171.0
175.0
185.0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
8.9
7.8
8.1
7.0
7.4
6.4
6.8
5.8
6.1
5.3
5.5
4.8
5.0
4.3
4.5
3.9
4.1
3.6
3.8
3.3
3.5
2.9
3.0
2.7
2.8
2.5
2.6
2.4
2.5
2.1
2.2
1.8
1.9
70.1
80.5
77.0
89.0
85.0
98.0
92.0
108
103
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
342
328
0.102
0.103
0.103
0.104
0.104
0.104
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
1. V
BR
measure after I
T
applied for 300μs, I
T
=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. For bipolar types having V
WM
of 10 volts and under, the I
D
limit is doubled.
4. For bidirectional use C or CA suffix for types P6SMB6.8 - P6SMB220A.
5. All terms and symbols are consistent with ANSI/IEEE C62.35.
3
Version:N1701
P6SMB6.8(A) - P6SMB220(A)
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING
CODE
R5
P6SMBxxxx
(Note 1)
Note:
1. "xxxx" defines voltage from 6.8V (P6SMB6.8) to 220V (P6SMB220A)
PACKING CODE
SUFFIX(*)
PACKAGE
SMB
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
H
R4
M4
G
SMB
SMB
*: Optional available
EXAMPLE P/N
EXAMPLE P/N
P6SMB20AHR5G
PART NO.
P6SMB20A
PART NO.
SUFFIX
H
PACKING
CODE
R5
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
4
Version:N1701
P6SMB6.8(A) - P6SMB220(A)
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig1. Peak Pulse Power Rating Curve
100
P
PPM
, PEAK PULSE POWER, KW
NON-REPETITIVE
PULSE
WAVEFORM
SHOWN in FIG.3
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
)
DERATING IN PERCENTAGE (%)
125
Fig2. Pulse Derating Curve
100
10
75
50
1
25
0.1
0.1
1
10
100
1000
10000
0
0
25
50
75
100
125
150
175
200
tp, PULSE WIDTH, (μs)
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig3. Clamping Power Pulse Waveform
IFSM, PEAK FORWARD SURGE CURRENT (A)
Fig4. Maximum Non-Repetitive Forward Surge
Current Unidirectional Only
100
8.3ms Single Half Sine Wave
140
I
PPM
, PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
0.5
1
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
Rise time tr=10μs to 100%
Peak value
I
PPM
Half value-I
PPM
/2
10/1000μs, waveform
td
1.5
2
2.5
3
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
PERCENT OF RATED PEAK (ms)
t, TIME REVERSE VOLTAGE (%)
5
Version:N1701
Power technology
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