BUT32V datasheet, PDF - EEWORLD Datasheet

BUT32V: DescriptionNPN TRANSISTOR POWER MODULE; CategoryDiscrete semiconductor The transistor; File Size246KB，7 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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BUT32V Overview

NPN TRANSISTOR POWER MODULE

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	STMicroelectronics
package instruction	ISOTOP-3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	80 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Maximum landing time (tf)	400 ns
JESD-30 code	R-XUFM-X3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	250 W
Maximum power dissipation(Abs)	250 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
VCEsat-Max	0.9 V

	BUT32V	BUT32V_03
Description	NPN TRANSISTOR POWER MODULE	NPN TRANSISTOR POWER MODULE

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