R1RP0404DGE-2LR datasheet, PDF

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R1RP0404DGE-2LR: Description4M High Speed SRAM (1-Mword 】 4-bit); Categorystorage storage; File Size78KB，13 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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R1RP0404DGE-2LR Overview

4M High Speed SRAM (1-Mword 】 4-bit)

R1RP0404DGE-2LR Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Renesas Electronics Corporation
Parts packaging code	SOJ
package instruction	0.400 INCH, PLASTIC, SOJ-32
Contacts	32
Reach Compliance Code	compli
ECCN code	3A991.B.2.A
Maximum access time	12 ns
I/O type	COMMON
JESD-30 code	R-PDSO-J32
length	20.95 mm
memory density	4194304 bi
Memory IC Type	STANDARD SRAM
memory width	4
Humidity sensitivity level	2
Number of functions	1
Number of terminals	32
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ32,.44
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	245
power supply	5 V
Certification status	Not Qualified
Maximum seat height	3.55 mm
Maximum standby current	0.0005 A
Minimum standby current	2 V
Maximum slew rate	0.13 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	20
width	10.16 mm

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R1RP0404D Series

4M High Speed SRAM (1-Mword

4-bit)

REJ03C0116-0100Z

Rev. 1.00

Mar.12.2004

Description

The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword

4-bit. It has realized high speed

access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

technology. It is most appropriate for the application which requires high speed and high density memory,

such as cache and buffer memory in system. The R1RP0404D is packaged in 400-mil 32-pin SOJ for high

density surface mounting.

Features

•

Single 5.0 V supply: 5.0 V

10%

•

Access time 12 ns (max)

•

Completely static memory



No clock or timing strobe required

•

Equal access and cycle times

•

Directly TTL compatible



All inputs and outputs

•

Operating current: 130 mA (max)

•

TTL standby current: 40 mA (max)

•

CMOS standby current : 5 mA (max)

: 1.0 mA (max) (L-version)

•

Data retention current: 0.5 mA (max) (L-version)

•

Data retention voltage: 2.0 V (min) (L-version)

•

Center V

and V

type pin out

Rev.1.00, Mar.12.2004, page 1 of 11

R1RP0404DGE-2LR Related Products

	R1RP0404DGE-2LR	R1RP0404D	R1RP0404DGE-2PR
Description	4M High Speed SRAM (1-Mword 】 4-bit)	4M High Speed SRAM (1-Mword 】 4-bit)	4M High Speed SRAM (1-Mword 】 4-bit)
Is it lead-free?	Lead free	-	Lead free
Is it Rohs certified?	conform to	-	conform to
Maker	Renesas Electronics Corporation	-	Renesas Electronics Corporation
Parts packaging code	SOJ	-	SOJ
package instruction	0.400 INCH, PLASTIC, SOJ-32	-	SOJ, SOJ32,.44
Contacts	32	-	32
Reach Compliance Code	compli	-	compli
ECCN code	3A991.B.2.A	-	3A991.B.2.A
Maximum access time	12 ns	-	12 ns
I/O type	COMMON	-	COMMON
JESD-30 code	R-PDSO-J32	-	R-PDSO-J32
length	20.95 mm	-	20.95 mm
memory density	4194304 bi	-	4194304 bi
Memory IC Type	STANDARD SRAM	-	STANDARD SRAM
memory width	4	-	4
Humidity sensitivity level	2	-	2
Number of functions	1	-	1
Number of terminals	32	-	32
word count	1048576 words	-	1048576 words
character code	1000000	-	1000000
Operating mode	ASYNCHRONOUS	-	ASYNCHRONOUS
Maximum operating temperature	70 °C	-	70 °C
organize	1MX4	-	1MX4
Output characteristics	3-STATE	-	3-STATE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
encapsulated code	SOJ	-	SOJ
Encapsulate equivalent code	SOJ32,.44	-	SOJ32,.44
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE
Parallel/Serial	PARALLEL	-	PARALLEL
Peak Reflow Temperature (Celsius)	245	-	245
power supply	5 V	-	5 V
Certification status	Not Qualified	-	Not Qualified
Maximum seat height	3.55 mm	-	3.55 mm
Maximum standby current	0.0005 A	-	0.005 A
Minimum standby current	2 V	-	4.5 V
Maximum slew rate	0.13 mA	-	0.13 mA
Maximum supply voltage (Vsup)	5.5 V	-	5.5 V
Minimum supply voltage (Vsup)	4.5 V	-	4.5 V
Nominal supply voltage (Vsup)	5 V	-	5 V
surface mount	YES	-	YES
technology	CMOS	-	CMOS
Temperature level	COMMERCIAL	-	COMMERCIAL
Terminal form	J BEND	-	J BEND
Terminal pitch	1.27 mm	-	1.27 mm
Terminal location	DUAL	-	DUAL
Maximum time at peak reflow temperature	20	-	20
width	10.16 mm	-	10.16 mm

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