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JANTXV1N5310

Description
Current Regulator Diode, 3.3mA I(S), 2.35V V(L), Silicon, DO-204AA,
CategoryDiscrete semiconductor    diode   
File Size82KB,17 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANTXV1N5310 Overview

Current Regulator Diode, 3.3mA I(S), 2.35V V(L), Silicon, DO-204AA,

JANTXV1N5310 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeDO-7
package instructionO-LALF-W2
Contacts2
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeCURRENT REGULATOR DIODE
Minimum dynamic impedance280000 Ω
JEDEC-95 codeDO-204AA
JESD-30 codeO-LALF-W2
JESD-609 codee0
Maximum limit voltage2.35 V
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.6 W
Certification statusNot Qualified
Nominal regulation current (Ireg)3.3 mA
Maximum repetitive peak reverse voltage100 V
surface mountNO
technologyFIELD EFFECT
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 24 September 2003.
INCH-POUND
MIL-PRF-19500/463F
24 June 2003
SUPERSEDING
MIL-S-19500/463E
12 October 1997
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, DIODE, SILICON, CURRENT REGULATOR,
TYPES 1N5283-1 THROUGH 1N5314-1, AND 1N5283UR-1 THROUGH 1N5314UR-1
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 100 volt, silicon, current regulator diodes.
Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.
Two levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figure 1 (DO-7), figure 2 (DO-213AB), and figure 3 (JANHC and JANKC).
1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings (see 3.10) and as follows:
a. PT = 500 mW (DO-7) at TL = +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink
at
L = .375 inch (9.53 mm). (Derate to 0 at +175°C).
b. PT = 500 mW (DO-213AB) at TEC = +125°C. (Derate to 0 at +175°C).
c. -65°C
Tj
+175°C; -65°C
TSTG
+175°C.
1.4 Primary electrical characteristics. Primary electrical ratings are as shown in maximum test ratings (see 3.10)
and as follows, (nominally 0.22 mA dc
IP
4.70 mA dc):
a. R
ΘJL
= 250°C/W (maximum) at L = .375 inch (9.53 mm) (DO-7).
b. R
ΘJEC
= 100°C/W (maximum) junction to end-caps (DO-213AB).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O.
Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD
Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961

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