CMLSH05-4DO datasheet, PDF - EEWORLD Datasheet

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CMLSH05-4DO: DescriptionSURFACE MOUNT PICOmini-TM DUAL ISOLATED, LOW V-f OPPOSING SILICON SCHOTTKY DIODES; CategoryDiscrete semiconductor diode; File Size82KB，2 Pages; ManufacturerCentral Semiconductor

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CMLSH05-4DO Overview

SURFACE MOUNT PICOmini-TM DUAL ISOLATED, LOW V-f OPPOSING SILICON SCHOTTKY DIODES

CMLSH05-4DO Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	SOT-563, 6 PIN
Contacts	6
Reach Compliance Code	_compli
ECCN code	EAR99
application	GENERAL PURPOSE
Minimum breakdown voltage	40 V
Configuration	SEPARATE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.47 V
JESD-30 code	R-PDSO-F6
JESD-609 code	e0
Maximum non-repetitive peak forward current	10 A
Number of components	2
Phase	1
Number of terminals	6
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	0.5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.25 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	40 V
Maximum reverse current	100 µA
Reverse test voltage	30 V
surface mount	YES
technology	SCHOTTKY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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CMLSH05-4DO

SURFACE MOUNT PICOmini

TM

DUAL ISOLATED, LOW VF

OPPOSING SILICON

SCHOTTKY DIODES

Central

DESCRIPTION:

TM

Semiconductor Corp.

The CENTRAL SEMICONDUCTOR

CMLSH05-4DO consists of two (2) individual

electrically isolated 40 volt Schottky Diodes with

opposing polarity and packaged in a space saving

SOT-563 surface mount case. This PICOmini™

device has been designed for applications

requiring a low forward voltage drop.

MARKING CODE: CO4

SOT-563 CASE

MAXIMUM RATINGS:

(TA=25°C)

SYMBOL

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current, tp

≤

1ms

Forward Surge Current, tp = 8ms

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

VRRM

IF

IFRM

IFSM

PD

TJ, Tstg

Θ

JA

40

500

3.5

10

250

-65 to +150

500

UNITS

V

mA

A

mW

°C

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE:

SYMBOL

IR

BVR

VF

CT

TEST CONDITIONS

VR= 10V

VR= 30V

IR= 500µA

IF= 100µA

IF= 1.0mA

IF= 10mA

IF= 100mA

IF= 500mA

VR= 1.0V, f=1.0 MHz

(TA=25°C unless otherwise noted)

MIN

MAX

20

100

40

0.13

0.21

0.27

0.35

0.47

50

UNITS

µA

V

pF

R1 (27-January 2004)

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