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1N4007 R0

Description
Rectifiers 1A,1000V,STD.SILASTIC RECTIFIER
Categorysemiconductor    Discrete semiconductor   
File Size309KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric View All

1N4007 R0 Overview

Rectifiers 1A,1000V,STD.SILASTIC RECTIFIER

1N4007 R0 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerTaiwan Semiconductor
Product CategoryRectifiers
Mounting StyleThrough Hole
Package / CaseDO-41
Vr - Reverse Voltage1000 V
If - Forward Current1 A
TypeStandard Recovery Rectifiers
ConfigurationSingle
Vf - Forward Voltage1 V
Max Surge Current30 A
Ir - Reverse Current5 uA
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
PackagingReel
Height2.7 mm
Length5.2 mm
ProductRectifiers
Width2.7 mm
Unit Weight0.010935 oz
1N4001 thru 1N4007
Taiwan Semiconductor
CREAT BY ART
FEATURES
- High efficiency, Low VF
- High current capability
- High reliability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Silicon Rectifiers
MECHANICAL DATA
Case:
DO-204AL (DO-41)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight:
0.33g (approximately)
DO-204AL (DO-41)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
ed
1N
1N
1N
100
70
100
200
200
400
280
400
1
30
3.7
1.0
5
50
10
6
15
65
- 55 to +150
- 55 to +150
140
nd
50
35
50
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
1N
1N
1N
800
560
800
1N
1000
700
1000
4001 4002 4003 4004 4005 4006 4007
600
420
600
UNIT
V
V
V
A
A
A
2
s
V
μA
pF
O
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@1A
tR
Maximum reverse current @ Rated VR T
J
=25
T
J
=125℃
Typical junction capacitance (Note 2)
Typical Thermal Resistance
No
eco
V
F
I
R
Cj
R
θjC
R
θjL
R
θjA
T
J
T
STG
mm
e
C/W
O
O
Operating junction temperature range
Storage temperature range
C
C
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1405004
Version: H14

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