INSULATED GATE BIPOLAR TRANSISTOR
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | International Rectifier （ Infineon ） |
| Parts packaging code | D2PAK |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 23 A |
| Collector-emitter maximum voltage | 600 V |
| Configuration | SINGLE |
| Maximum landing time (tf) | 150 ns |
| Gate emitter threshold voltage maximum | 6 V |
| Gate-emitter maximum voltage | 20 V |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 100 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | POWER CONTROL |
| Transistor component materials | SILICON |
| Nominal off time (toff) | 320 ns |
| Nominal on time (ton) | 33 ns |
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