FCPF600N65S3R0L datasheet, PDF

FCPF600N65S3R0L: DescriptionMOSFET SUPERFET3 650V 6A 600 mOhm; Categorysemiconductor Discrete semiconductor; File Size282KB，11 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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MOSFET SUPERFET3 650V 6A 600 mOhm

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	ON Semiconductor
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-220F-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	6 A
Rds On - Drain-Source Resistance	600 mOhms
Vgs th - Gate-Source Threshold Voltage	2.5 V
Vgs - Gate-Source Voltage	30 V
Qg - Gate Charge	11 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd - Power Dissipation	24 W
Channel Mode	Enhancement
Packaging	Tube
Forward Transconductance - Min	3.6 S
Fall Time	14 ns
Rise Time	9 ns
Factory Pack Quantity	1000
Typical Turn-Off Delay Time	29 ns
Typical Turn-On Delay Time	11 ns

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